General Einstein relation model in disordered organic semiconductors under quasiequilibrium

Ling Li; Nianduan Lu; Ming Liu; Heinz Baessler

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General Einstein relation model in disordered organic semiconductors under quasiequilibrium

机译：准平衡下无序有机半导体的广义爱因斯坦关系模型

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In this work, the Einstein relation between the diffusivity and mobility of charge carriers for disordered organic semiconductors is analyzed. We formulate an analytic theory that allows predicting the Einstein relation for charge carrier hopping in disordered organic semiconductors with Gaussian density of states distribution as a function of disorder, temperature, bias field, and Fermi level, i.e., concentration of occupied states of the DOS under the condition of quasiequilibrium. By scanning the Fermi across the DOS, we calculate the charge carrier mobility and diffusivity as well the q D/μk_B ratio. We are thus able to identify the role of mobile and localized states on the interplay of diffusion and drift and can determine under which condition Einstein relation is valid or not.

机译：在这项工作中，分析了无序有机半导体的电荷载流子的扩散率和迁移率之间的爱因斯坦关系。我们制定了一种分析理论，该理论可以预测无序有机半导体中载流子跳跃的爱因斯坦关系，其状态分布的高斯密度与无序度，温度，偏置场和费米能级（即DOS下的DOS占据态的浓度）有关准平衡的条件。通过跨DOS扫描费米，我们计算出载流子迁移率和扩散率以及q D /μk_B比。因此，我们能够确定流动态和局部态在扩散和漂移相互作用中的作用，并可以确定在哪种条件下爱因斯坦关系有效或无效。

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来源
《Physical review》 |2014年第21期|214107.1-214107.6|共6页
作者
Ling Li; Nianduan Lu; Ming Liu; Heinz Baessler;
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作者单位

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China;

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China;

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China;

Bayreuth Institute of Macromolecular Research (BIMF), University of Bayreuth, D-95440 Bayreuth, Germany;

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正文语种 eng
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关键词
mobility edges; hopping transport; polymers; organic compounds (including organic semiconductors); polymers; organic compounds;

机译：流动性边缘;跳车运输;聚合物有机化合物（包括有机半导体）;聚合物有机化合物;

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2. Validity of the Einstein Relation in Disordered Organic Semiconductors [J] . G. A. H. Wetzelaer, L. J. A. Koster, P. W. M. Blom Physical review letters . 2011,第6期

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3. Potential-Dependent Generalized Einstein Relation in Disordered Organic Semiconductors [J] . LU Xiao-Hong, SUN Jiu-Xun, GUO Yang, 中国物理快报：英文版 . 2009,第008期

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机译：无序有机半导体中的通用爱因斯坦关系模型在准平衡下

General Einstein relation model in disordered organic semiconductors under quasiequilibrium

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