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首页> 外文期刊>Physical review >Boron diffusion induced symmetry reduction and scattering in CoFeB/MgO/CoFeB magnetic tunnel junctions
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Boron diffusion induced symmetry reduction and scattering in CoFeB/MgO/CoFeB magnetic tunnel junctions

机译：硼扩散引起CoFeB / MgO / CoFeB磁性隧道结中的对称性减少和散射

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摘要

By first-principles analysis, we investigate the effect of thermal annealing on structural stability of CoFeB/MgO(thin)/CoFeB magnetic tunnel junctions. The calculated phonon dispersion indicates that Mg_3B_2O_6 (kotoite) is a stable spacer after annealing due to B diffusion into MgO. The calculated tunneling magnetoresis-tance (TMR) of CoFe/kotoite/CoFe is 210%, which is in good agreement with the available experimental value and 2 orders of magnitude lower than the predicted values of CoFe/MgO/CoFe junctions. The physics of this more realistic TMR value is the change in symmetry from C_(4v) of MgO to C_(2v) of kotoite. Such symmetry reduction induces scattering and weakens the tunneling transmission of the △_1-like Bloch states. Our calculations also reveal that the tunneling transmission is sensitive to the electrode/spacer interfacial chemical bonding. Residual boron, localized at the interface due to insufficient annealing temperature, can further reduce the TMR.
机译：通过第一性原理分析，我们研究了热退火对CoFeB / MgO（薄）/ CoFeB磁性隧道结的结构稳定性的影响。计算出的声子色散表明，由于B扩散到MgO中，Mg_3B_2O_6（铁矾石）是退火后的稳定间隔物。 CoFe / kotoite / CoFe的隧穿磁阻（TMR）为210％，与可用的实验值非常吻合，比CoFe / MgO / CoFe结的预测值低2个数量级。这个更现实的TMR值的物理性质是从MgO的C_（4v）到kotoite的C_（2v）的对称性变化。这种对称性的降低引起散射，并削弱了类似△_1的布洛赫态的隧穿传输。我们的计算还表明，隧穿传输对电极/间隔物界面化学键敏感。由于退火温度不足而位于界面处的残留硼可以进一步降低TMR。

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  • 来源
    《Physical review》 |2013年第1期|014114.1-014114.6|共6页
  • 作者

    Zhaoqiang Bai; Lei Shen; Qingyun Wu; Minggang Zeng; Jian-Sheng Wang; Guchang Hau; Yuan Ping Feng;

  • 作者单位

    Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore 117542, Singapore,Data Storage Institute, Agency for Science Technology and Research, 5 Engineering Drive 1, Singapore 117608, Singapore;

    Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore 117542, Singapore;

    Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore 117542, Singapore;

    Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore 117542, Singapore;

    Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore 117542, Singapore;

    Data Storage Institute, Agency for Science Technology and Research, 5 Engineering Drive 1, Singapore 117608, Singapore;

    Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore 117542, Singapore;

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  • 正文语种 eng
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  • 关键词

    spin transport through interfaces; phonons in crystal lattices; diffusion in solids; giant magnetoresistance;

    机译：通过接口旋转传输;晶格中的声子;固体中的扩散;巨磁阻;

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