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Spin-polarized scanning tunneling microscopy of the room-temperature antiferromagnet c-FeSi

机译:室温反铁磁体c-FeSi的自旋极化扫描隧道显微镜

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Antiferromagnetic spin ordering has been revealed by room-temperature spin-polarized scanning tunneling microscopy (SP-STM) in thin epitaxial films of c-FeSi on Si(l 11). Spin polarization of tunneling current for unoccupied states is found to be unusually large I_(↑↑)I_(↓↑) - 3.8. Atomically sharp spin-frustration domain walls, developing on the surfaces of nanoscale islands, have been observed on SP-STM images. Our results suggest that antiferromagnetism in c-FeSi is driven by Mott-Hubbard transition, and the atomically narrow domain walls are caused by local insulator-to-metal breakdown.
机译:反铁磁自旋排序已通过室温自旋极化扫描隧道显微镜(SP-STM)在Si(11)上的c-FeSi薄外延膜中揭示。发现未占用状态的隧穿电流的自旋极化异常大I_(↑↑)I_(↓↑)-3.8。在SP-STM图像上已经观察到在纳米级岛表面上形成的原子尖锐的自旋失意畴壁。我们的结果表明,c-FeSi中的反铁磁性是由Mott-Hubbard跃迁驱动的,原子上狭窄的畴壁是由局部绝缘体与金属的击穿引起的。

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