L-valley electron spin dynamics in GaAs

T. T. Zhang; P. Barate; C. T. Nguyen; A. Balocchi; T. Amand; P. Renucci; H. Carrere; B. Urbaszek; X. Marie

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L-valley electron spin dynamics in GaAs

机译：GaAs中的L谷电子自旋动力学

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Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region, yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the Γ valley following an energy relaxation of several hundreds of meV. Combining these high energy photoexcitation experiments with time-resolved photoluminescence spectroscopy of Γ-valley spin-polarized photogenerated electrons allows us to deduce a typical L-valley electron spin relaxation time of 200 fs, in agreement with theoretical calculations.%041201-1

机译：在具有3eV区域光激发能的GaAs外延层中进行了光学取向实验，从而在卫星L谷中产生了自旋极化电子的光生。我们证明，当电子从数百meV的能量弛豫从L散射到Γ谷时，可以保留很大一部分的电子自旋记忆。将这些高能光激发实验与Γ谷自旋极化光生电子的时间分辨光致发光光谱相结合，可以使我们推论出典型的L谷电子自旋弛豫时间为200 fs，与理论计算相符。％041201-1

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来源
《Physical review》 |2013年第4期|42-45|共4页
作者
T. T. Zhang; P. Barate; C. T. Nguyen; A. Balocchi; T. Amand; P. Renucci; H. Carrere; B. Urbaszek; X. Marie;
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作者单位

INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 avenue de Rangueil, 31077 Toulouse, France;

INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 avenue de Rangueil, 31077 Toulouse, France;

INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 avenue de Rangueil, 31077 Toulouse, France;

INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 avenue de Rangueil, 31077 Toulouse, France;

INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 avenue de Rangueil, 31077 Toulouse, France;

INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 avenue de Rangueil, 31077 Toulouse, France;

INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 avenue de Rangueil, 31077 Toulouse, France;

INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 avenue de Rangueil, 31077 Toulouse, France;

INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 avenue de Rangueil, 31077 Toulouse, France;

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spin relaxation and scattering; optical creation of spin polarized carriers; Ⅲ-Ⅴ semiconductors;

机译：自旋弛豫和散射;自旋极化载体的光学产生;Ⅲ-Ⅴ族半导体;

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1. L-valley electron transport in GaAs-AlAs double-barrier resonant tunneling structures studied by ballistic electron emission microscopy - art. no. 033309 [J] . Rakoczy D., Strasser G., Strahberger C., Physical Review, B. Condensed Matter . 2002,第3期

机译：弹道电子发射显微镜研究GaAs-AlAs双势垒共振隧穿结构中的L谷电子输运-Art。没有。 033309
2. Dynamics of electron-spin injection in a heterovalent GaAs/AlGaAs/ZnMnSe structure with a coupled double quantum well of GaAs/AlGaAs [J] . Y. Kuno, T. Sasaki, T. Kiba, Journal of Crystal Growth . 2013,第sepa1期

机译：GaAs / AlGaAs双量子阱耦合的杂化GaAs / AlGaAs / ZnMnSe结构中电子自旋注入的动力学
3. Spin dynamics of electrons and holes in InGaAs/GaAs quantum wells at millikelvin temperatures [J] . L. V. Fokina, I. A. Yugova, D. R. Yakovlev, Physical review . 2010,第19期

机译：毫微卡尔文温度下InGaAs / GaAs量子阱中电子和空穴的自旋动力学
4. Optical orientation of electron spins in GaAs L-valleys [C] . Andrea Balocchi, Philippe Barate, Tiantian Zhang, Spintronics symposium . 2014

机译：GaAs L谷中电子自旋的光学取向
5. Far-infrared studies of electron-electron interactions in Si-doped GaAs/AlGaAs multiple quantum wells. [D] . Jiang, Zhenxin. 1997

机译：掺Si的GaAs / AlGaAs多量子阱中电子与电子相互作用的远红外研究。
6. Observation of Extrinsic Photo-Induced Inverse Spin Hall Effect in a GaAs/AlGaAs Two-Dimensional Electron Gas [O] . Jinling Yu, Xiaolin Zeng, Yumeng Wang, 2018

机译：GaAs / AlGaAs二维电子气体中外在光诱导的逆自旋霍尔效应的观察
7. L-valley Electron Spin Dynamics in GaAs [O] . Zhang, T., Barate, P., Nguyen, C. T., 2012

机译：Gaas中的L谷电子自旋动力学

L-valley electron spin dynamics in GaAs

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