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首页> 外文期刊>Physical review >Electronic structure of the hydrogen-adsorbed SrTiO_3(001) surface studied by polarization-dependent photoemission spectroscopy
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Electronic structure of the hydrogen-adsorbed SrTiO_3(001) surface studied by polarization-dependent photoemission spectroscopy

机译：偏振相关光发射光谱研究氢吸附SrTiO_3（001）表面的电子结构

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摘要

The metallic band structure of the hydrogen-adsorbed SrTiO_3 (001) surface is studied by polarization-dependent photoemission spectroscopy measurements. With the dipole-transition selection arguments, we attributed the metallic peaks into the Ti 3d_(xz), 3d_(yz), and 3d_(xy) bands. These t_(2g) bands are partially filled with electrons upon H-induced downward band bending at the surface. Energy splitting of the Ti 3d t_(2g) bands is considered to be induced by a quantum confinement along the surface normal (z) direction. The metallic peaks are accompanied by the incoherent states induced by many-body interactions, which likely indicates that the electronic system forms a two-dimensional liquid phase. Also emerged by H exposure are an in-gap state and a σ(O - H) state. The possible origin and the feature of these states are discussed from the polarization dependence of the photoemission intensity.
机译：通过偏振相关的光发射光谱测量研究了氢吸附的SrTiO_3（001）表面的金属能带结构。利用偶极转变选择参数，我们将金属峰归因于Ti 3d_（xz），3d_（yz）和3d_（xy）带。这些t_（2g）带在表面H诱导的向下带弯曲时被电子部分填充。 Ti 3d t_（2g）谱带的能量分裂被认为是由于沿表面法线（z）方向的量子限制而引起的。金属峰伴有由多体相互作用引起的非相干状态，这很可能表明电子系统形成了二维液相。 H暴露还会出现间隙内状态和σ（OH）状态。从光发射强度的偏振依赖性讨论了这些状态的可能起源和特征。

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  • 来源
    《Physical review》 |2013年第11期|115314.1-115314.6|共6页
  • 作者

    R. Yukawa; S. Yamamoto; K. Ozawa; M. DAngelo; M. Ogawa; M. G. Silly; F. Sirotti; I. Matsuda;

  • 作者单位

    Institute for Solid State Physics, the University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, the University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Department of Chemistry and Materials Science, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551, Japan;

    Institut des Nanosciences de Paris, Universite Pierre et Marie Curie-Paris 6, CNRS-UMR 7588, 4 place Jussieu, 75252 Paris, France;

    Institute for Solid State Physics, the University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    TEMPO Beamline, Synchrotron Soleil, L'Orme des Merisiers Saint-Aubin BP48 91192 Gif-sur-Yvette Cedex, France;

    TEMPO Beamline, Synchrotron Soleil, L'Orme des Merisiers Saint-Aubin BP48 91192 Gif-sur-Yvette Cedex, France;

    Institute for Solid State Physics, the University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

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  • 关键词

    adsorbed layers and thin films; electron states at surfaces and interfaces; metal-insulator transitions and other electronic transitions;

    机译：吸附层和薄膜;表面和界面的电子态;金属绝缘体过渡和其他电子过渡;

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