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Upper critical field of high-quality single crystals of KFe_2As_2

机译:高质量KFe_2As_2单晶的上临界场

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Measurements of temperature-dependent in-plane resistivity ρ(T) were used to determine the upper critical field and its anisotropy in high-quality single crystals of the stoichiometric iron arsenide superconductor KFe_2As_2. The crystals were characterized by the residual resistivity ratio ρ(300 K)/ρ(0) up to 3000 and the resistive transition midpoint temperature T_c = 3.8 K, significantly higher than in previous studies on the same material. We find increased H_(c2)(T) for both directions of the magnetic field, which scale with the increased T_c. This unusual linear H_(c2)(T_c) scaling is not expected for an orbital-limiting mechanism of the upper critical field in clean materials.
机译:测量与温度有关的面内电阻率ρ(T),以确定化学计量的砷化铁超导体KFe_2As_2的高质量单晶中的上临界场及其各向异性。晶体的特征是残留电阻率比ρ(300 K)/ρ(0)高达3000,电阻转变中点温度T_c = 3.8 K,明显高于以前对相同材料的研究。我们发现磁场的两个方向的H_(c2)(T)都增加,并且随T_c的增加而缩放。对于清洁材料中上临界场的轨道限制机制,这种异常的线性H_(c2)(T_c)缩放是无法预期的。

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