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Local spectroscopy of the electrically tunable band gap in trilayer graphene

机译:三层石墨烯中电可调带隙的局部光谱

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摘要

The stacking order in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially resolved tunneling spectroscopy measurements of dual gated Bernal (ABA) and rhombohedral (ABC) stacked trilayer graphene devices. We demonstrate that while ABA trilayer graphene remains metallic, ABC trilayer graphene exhibits a widely tunable band gap as a function of electric field. However, we find that charged impurities in the underlying substrate cause substantial spatial fluctuations of the gap size. Our work elucidates the microscopic behavior of trilayer graphene and its consequences for macroscopic devices.
机译:三层石墨烯中的堆叠顺序在确定电场可调带隙的存在中起着至关重要的作用。我们目前的空间分辨隧道光谱测量双门Bernal(ABA)和菱形(ABC)堆叠的三层石墨烯设备。我们证明了,虽然ABA三层石墨烯仍然具有金属性,但ABC三层石墨烯却表现出随电场变化的可调节带隙。但是,我们发现下面的基板中的带电杂质会引起间隙尺寸的大幅空间波动。我们的工作阐明了三层石墨烯的微观行为及其对宏观器件的影响。

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