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首页> 外文期刊>Physical review >Local compressibility measurement of the v_(tot) = 1 quantum Hall state in a bilayer electron system
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Local compressibility measurement of the v_(tot) = 1 quantum Hall state in a bilayer electron system

机译：双层电子系统中v_（tot）= 1量子霍尔态的局部可压缩性测量

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摘要

The filling v_(tot) = 1 quantum Hall state under charge imbalance is investigated through both transport and thermodynamic measurements on a high-mobility low-density GaAs bilayer sample with negligible single particle tunneling. The v_(tot) = 1 state demonstrates its robustness against imbalance by evolving continuously from the single layer regime (v_(upper) = 1, v_(lower) = 0) to the bilayer regime with fillings v_(upper) = 1/3 and v_(lower) = 2/3 for the separate layers. The energy gap of the v_(tot) = 1 state obtained from compressibility measurements using single electron transistors depends on position, i.e., the local disorder potential. Nevertheless, compressibility and thermal activation measurements yield comparable values for the energy gap under imbalance.
机译：通过在可迁移的低密度GaAs双层样品上进行可忽略的单粒子隧穿的输运和热力学测量，研究了电荷不平衡下的填充v_（tot）= 1量子霍尔态。 v_（tot）= 1状态通过从单层模式（v_（上部）= 1，v_（下部）= 0）不断演变为具有填充v_（上部）= 1/3的双层状态，证明了其对不平衡的鲁棒性而v_（lower）= 2/3（用于单独的层）。从使用单电子晶体管的压缩率测量获得的v_（tot）＝ 1状态的能隙取决于位置，即局部无序电势。然而，可压缩性和热活化测量得出不平衡下能隙的可比值。

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