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Dynamics of Bloch oscillating transistor near the bifurcation threshold

机译:分叉阈值附近的Bloch振荡晶体管的动力学

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The tendency to bifurcate can often be utilized to improve performance characteristics of amplifiers or even to build detectors. The Bloch oscillating transistor is such a device. Here, we show that bistable behavior can be approached by tuning the base current and that the critical value depends on the Josephson coupling energy E_J of the device. We demonstrate current-gain enhancement for the device operating near the bifurcation point at small E_J. From our results for the current gains at various.E_J, we determine the bifurcation threshold on the E_J-base current plane. The bifurcation threshold curve can be understood using the interplay of interband and intraband tunneling events.
机译:分叉的趋势通常可以用来改善放大器的性能特性,甚至可以用来构建检测器。 Bloch振荡晶体管就是这样的器件。在这里,我们表明可以通过调整基极电流来达到双稳态行为,并且临界值取决于器件的约瑟夫森耦合能E_J。我们展示了在小E_J分叉点附近工作的器件的电流增益增强。根据我们在各种E_J下的电流增益的结果,我们确定E_J基电流平面上的分叉阈值。分叉阈值曲线可以使用带间和带内隧道事件的相互作用来理解。

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