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首页> 外文期刊>Physical review >Carrier-transfer dynamics between neutral and charged excitonic states in a single quantum dot probed with second-order photon correlation measurements
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Carrier-transfer dynamics between neutral and charged excitonic states in a single quantum dot probed with second-order photon correlation measurements

机译：用二阶光子相关测量探测的单个量子点中性和带电激子态之间的载流子传输动力学

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摘要

We report a comprehensive investigation of carrier-transfer dynamics in a single InAs quantum dot (QD) based on second-order photon correlation measurements. The experimentally obtained auto and crosscorrelation functions as well as photoluminescence intensities are successfully explained on the basis of a series of rate equations with common excitation and also single-carrier-capture/escape rates to/from a QD. This approach enables us to understand the carrier-transfer dynamics responsible for the stability of a quantum two-level system formed in a single QD under various excitation conditions. We clarify that the transition between neutral and charged excitonic states is suppressed by one order of magnitude under quasiresonant excitation.
机译：我们报告了基于二阶光子相关性测量的单个InAs量子点（QD）中的载流子传输动力学的全面研究。实验获得的自相关函数和互相关函数以及光致发光强度在一系列速率方程的基础上得到了成功解释，这些速率方程具有共同的激发以及单载子捕获/逃逸到QD的速率。这种方法使我们能够了解载流子传输动力学，该动力学负责在各种激发条件下在单个QD中形成的量子两能级系统的稳定性。我们阐明，在准共振激励下，中性和带电激子态之间的过渡被抑制了一个数量级。

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  • 来源
    《Physical review》 |2013年第4期|045324.1-045324.6|共6页
  • 作者

    H. Nakajima; H. Kumano; H. Iijima; S. Odashima; I. Suemune;

  • 作者单位

    Research Institute for Electronic Science, Hokkaido University, N21W10, Kita-ku, Sapporo 001-0021, Japan,Research Fellow of the Japan Society for the Promotion of Science, 1-8, Chiyoda-ku, Tokyo 102-8472, Japan;

    Research Institute for Electronic Science, Hokkaido University, N21W10, Kita-ku, Sapporo 001-0021, Japan;

    Research Institute for Electronic Science, Hokkaido University, N21W10, Kita-ku, Sapporo 001-0021, Japan;

    Research Institute for Electronic Science, Hokkaido University, N21W10, Kita-ku, Sapporo 001-0021, Japan;

    Research Institute for Electronic Science, Hokkaido University, N21W10, Kita-ku, Sapporo 001-0021, Japan;

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