Thickness dependence of degree of spin polarization of electrical current in permalloy thin films

Mohammad Haidar; Matthieu Bailleul

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Thickness dependence of degree of spin polarization of electrical current in permalloy thin films

机译：坡莫合金薄膜中电流自旋极化程度的厚度依赖性

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Spin-polarized electrical transport is investigated in Al_2O_3/Ni_(80)Fe_(20)/Al_2O_3 thin films for permalloy thickness between 6 and 20 nm. The degree of spin polarization of the current flowing in the plane of the film is measured through the current-induced spin-wave Doppler shift. We find that it decreases as the film thickness decreases from 0.63 at 20 nm to 0.42 at 6 nm. This decrease is attributed to a spin depolarization induced by the film surfaces. A model is proposed which takes into account the contributions of the different sources of electron scattering (alloy disorder, phonons, thermal magnons, grain boundaries, film surfaces) to the measured spin-dependent resistivities.

机译：在Al_2O_3 / Ni_（80）Fe_（20）/ Al_2O_3薄膜中研究了自旋极化的电传输，其坡莫合金厚度为6至20 nm。通过电流感应的自旋波多普勒频移来测量流过薄膜平面的电流的自旋极化程度。我们发现，随着膜厚度从20 nm处的0.63减小到6 nm处的0.42，它会减小。该减少归因于膜表面引起的自旋去极化。提出了一个模型，该模型考虑了不同的电子散射源（合金无序，声子，热磁振子，晶界，薄膜表面）对测得的自旋相关电阻率的影响。

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来源
《Physical review》 |2013年第5期|054417.1-054417.5|共5页
作者
Mohammad Haidar; Matthieu Bailleul;
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作者单位

IPCMS and NIE, UMR 7504 CNRS-Universite de Strasbourg, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2, France;

IPCMS and NIE, UMR 7504 CNRS-Universite de Strasbourg, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2, France;

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正文语种 eng
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electronic transport phenomena in thin films; spin waves; magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields;

机译：薄膜中的电子传输现象;自旋波磁电子学自旋电子学：利用自旋极化传输或集成磁场的设备;

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1. Temperature dependence of the magnetic and electrical properties of Permalloy/gadolinium/Permalloy thin films [J] . R. Ranchal, C. Aroca, M. Maicas, Journal of Applied Physics . 2007,第5期

机译：坡莫合金/ ga /坡莫合金薄膜的电磁性能的温度依赖性
2. Thickness dependence of spin polarization and electronic structure of ultra-thin films of MoS₂ and related transition-metal dichalcogenides [J] . Tay-Rong Chang, Hsin Lin, Horng-Tay Jeng, Scientific reports. . 2014,第1期

机译：MoS _{2 及相关过渡金属二卤化物超薄膜的自旋极化厚度与电子结构的关系}
3. Structural, electrical and magnetic properties of evaporated permalloy thin films: Effect of substrate and thickness [J] . Guittoum A., Bourzami A., Layadi A., The European physical journal. Applied physics . 2012,第2期

机译：蒸发坡莫合金薄膜的结构，电和磁性能：基底和厚度的影响
4. Thickness dependence of induced magnetic anistropy in very thin permalloy films [C] . Katada, H., Shimatsu, . 2000

机译：非常薄的坡莫合金薄膜中感应磁各向异性的厚度依赖性
5. Study of the surface magnetic microstructure of permalloy thin films and 3 percent Si-Fe sheets using scanning electron microscopy with polarization analysis (SEMPA). [D] . Lee, Yeon-Suk. 1998

机译：使用极化分析（SEMPA）的扫描电子显微镜研究坡莫合金薄膜和3％Si-Fe片的表面磁显微结构。
6. Thickness dependence of spin polarization and electronic structure of ultra-thin films of MoS2 and related transition-metal dichalcogenides [O] . Tay-Rong Chang, Hsin Lin, Horng-Tay Jeng, -1

机译：MoS2和相关过渡金属二卤化物超薄膜的自旋极化厚度与电子结构的关系
7. Thickness dependence of the degree of spin polarization of the electrical current in permalloy thin films [O] . Haidar, Mohammad, Bailleul, Matthieu 2013

机译：厚度依赖性的自旋极化程度坡莫合金薄膜中的电流

Thickness dependence of degree of spin polarization of electrical current in permalloy thin films

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