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首页> 外文期刊>Physical review >Large resistivity change and phase transition in the antiferromagnetic semiconductors LiMnAs and LaOMnAs
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Large resistivity change and phase transition in the antiferromagnetic semiconductors LiMnAs and LaOMnAs

机译：反铁磁半导体LiMnAs和LaOMnAs中的大电阻率变化和相变

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摘要

Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here we present a comparison between the structural, magnetic, and electronic properties of LiMnAs, LaOMnAs, and related materials. Interestingly, both LiMnAs and LaOMnAs show a variation in resistivity with more than five orders of magnitude, making them particularly suitable for use in future electronic devices. Neutron and x-ray diffraction measurements on LiMnAs show a magnetic phase transition corresponding to the Neel temperature of 373.8 K, and a structural transition from the tetragonal to the cubic phase at 768 K. These experimental results are supported by density functional theory calculations.
机译：反铁磁半导体是自旋电子应用和自旋阀的新替代材料。在这项工作中，我们报告了对两种反铁磁半导体AMnAs（A = Li，LaO）的详细研究，它们与著名的LiFeAs和LaOFeAs超导体是同构的。在这里，我们介绍了LiMnAs，LaOMnAs和相关材料的结构，磁性和电子性质之间的比较。有趣的是，LiMnAs和LaOMnAs都显示出电阻率变化超过五个数量级，这使其特别适合在未来的电子设备中使用。在LiMnAs上的中子和X射线衍射测量显示出对应于Neel温度373.8 K的磁相转变，以及在768 K时从四方相到立方相的结构转变。这些实验结果得到密度泛函理论计算的支持。

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  • 来源
    《Physical review》 |2013年第18期|184429.1-184429.12|共12页
  • 作者

    A. Beleanu; J. Kiss; G. Kreiner; C. Koehler; L. Muechler; W. Schnelle; U. Burkhardt; S. Chadov; S. Medvediev; D. Ebke; C. Felser; G. Cordier; B. Albert; A. Hoser; F. Bernardi; T. I. Larkin; D. Proepper; A. V. Boris; B. Keimer;

  • 作者单位

    Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden, Germany;

    Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden, Germany;

    Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden, Germany;

    Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden, Germany;

    Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden, Germany;

    Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden, Germany;

    Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden, Germany;

    Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden, Germany;

    Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden, Germany;

    Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden, Germany;

    Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden, Germany;

    Technical University of Darmstadt, Eduard-Zintl-Institute of Inorganic and Physical Chemistry, Darmstadt, Germany;

    Technical University of Darmstadt, Eduard-Zintl-Institute of Inorganic and Physical Chemistry, Darmstadt, Germany;

    Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH, Berlin, Germany;

    Departamento de Fisica, Instituto de Fisica, Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS, Brazil;

    Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;

    Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;

    Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;

    Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany;

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  • 关键词

    magnetic semiconductors; electrical and thermal conduction in crystalline metals and;

    机译：磁性半导体晶体金属中的导电和导热;

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