...
首页> 外文期刊>Physical review >Strong ferromagnetism in hydrogenated monolayer MoS_2 tuned by strain
【24h】

Strong ferromagnetism in hydrogenated monolayer MoS_2 tuned by strain

机译:应变调谐的氢化单层MoS_2中的强铁磁性

获取原文
获取原文并翻译 | 示例
           

摘要

The electronic and magnetic properties of hydrogenated monolayer M0S2 subject to equibiaxial tensile strain are systematically investigated using first-principles calculations. It is shown that at the strain-free state, the hydrogenated MoS_2 is an n-type semiconductor with no spontaneous magnetism. As the tensile strain increases, however, a ground-state transition from nonmagnetism to ferromagnetism (FM) occurs with simultaneously enhanced magnetic moment and stability. The maximum FM state is achieved at a strain of 6.6%, which corresponds to Curie temperature T_c of 232 K. As the strain increases further, both strength and stability of the ferromagnetic state weaken and eventually vanish due to the enhanced ionic character in Mo-S bonds and the resulting delocalization of Mo d orbitals. Similar behavior is also predicted in hydrogenated monolayer MoSe_2. The present work by combining chemical functionalization and strain engineering provides a route to harness the magnetic properties of two-dimensional transition metal dichalcogenides for spintronic applications.
机译:使用第一性原理系统地研究了受等双轴拉伸应变作用的氢化单分子膜M0S2的电子和磁性。结果表明,在无应变状态下,氢化的MoS_2为无自发磁性的n型半导体。但是,随着拉伸应变的增加,会发生从非磁性到铁磁性(FM)的基态跃迁,同时增强了磁矩和稳定性。在6.6%的应变下达到最大FM状态,对应于232 K的居里温度T_c。随着应变的进一步增加,铁磁态的强度和稳定性都会减弱,最终由于Mo-中增强的离子特性而消失。 S键和Mo d轨道的离域化。在氢化单层MoSe_2中也预测出类似的行为。通过结合化学功能化和应变工程的当前工作为自旋电子学应用提供了利用二维过渡金属二卤化物的磁性的途径。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号