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Tuning of quantum interference in top-gated graphene on SiC

机译：SiC上顶层石墨烯中量子干涉的调谐

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摘要

We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and charge density. We perform a systematic study of the quantum corrections to the magnetoresistance due to quantum interference of quasiparticles and electron-electron interaction. We analyze the contribution of the different scattering mechanisms affecting the magnetotransport in the -2.0 × 10~(10) cm~(-2) to 3.75 × 10~(11)cm~(-2) density region and find a significant influence of the charge density on the intravalley scattering time. Furthermore, we observe a modulation of the electron-electron interaction with charge density not accounted for by present theory. Our results clarify the role of quantum transport in SiC-based devices, which will be relevant in the development of a graphene-based technology for coherent electronics.
机译：我们报告了外延生长在SiC Si面上的单层石墨烯的顶部门控霍尔棒中的量子干涉测量结果，其中从负磁阻到正磁阻的转变是通过改变温度和电荷密度实现的。由于准粒子的量子干涉和电子-电子相互作用，我们对磁阻的量子校正进行了系统的研究。我们分析了在-2.0×10〜（10）cm〜（-2）到3.75×10〜（11）cm〜（-2）密度区域中影响磁传输的不同散射机制的贡献，并发现了显着的影响谷内散射时间的电荷密度。此外，我们观察到电子-电子相互作用的调制，其电荷密度没有被当前理论所解释。我们的研究结果阐明了量子传输在基于SiC的设备中的作用，这与相干电子的基于石墨烯的技术的发展有关。

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  • 来源
    《Physical review》 |2013年第23期|235406.1-235406.9|共9页
  • 作者

    Andrea Iagallo; Shinichi Tanabe; Stefano Roddaro; Makoto Takamura; Hiroki Hibino; Stefan Heun;

  • 作者单位

    NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy;

    NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiva, Atsugi, Kanagawa 243-0198, Japan;

    NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy,Istituto Officina dei Materiali CNR, Laboratorio TASC, 34149 Trieste, Italy;

    NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiva, Atsugi, Kanagawa 243-0198, Japan;

    NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiva, Atsugi, Kanagawa 243-0198, Japan;

    NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy;

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  • 正文语种 eng
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  • 关键词

    weak or anderson localization; magnetoresistance;

    机译：弱或安德森本地化;磁阻;

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