Optical properties of Mn-doped GaN

A. Boukortt; R. Hayn; F. Virot

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Optical properties of Mn-doped GaN

机译：Mn掺杂GaN的光学性质

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Wide-gap GaN semiconductors with or without Mn impurities are extremely interesting systems for opto-or spintronics applications. We present a theoretical study of the optical properties of Ga_(1-x)Mn_xN in the cubic structure using a supercell of 64 atoms. First-principles calculations based on density functional theory are performed by employing the full-potential linearized augmented plane wave method. To describe the correct insulating ground state of GaN:Mn, the local spin density approximation (LSDA) with the Hubbard-like Coulomb term (LSDA +U method) is applied, in addition to the Jahn-Teller effect. We analyze the density of states, the optical transitions, and the dielectric function (real and imaginary part). The optical absorption coefficient is also studied, and we indicate the appearance of local peaks in the gap related with the magnetic impurities, which we analyze in detail.

机译：具有或不具有Mn杂质的宽间隙GaN半导体是光电子或自旋电子学应用中非常有趣的系统。我们提出了使用64个原子的超晶格在立方结构中Ga_（1-x）Mn_xN光学性质的理论研究。基于密度泛函理论的第一性原理计算是采用全势线性化增强平面波方法进行的。为了描述GaN：Mn的正确绝缘基态，除使用Jahn-Teller效应外，还应用了具有类似Hubbard的库仑项（LSDA + U方法）的局部自旋密度近似（LSDA）。我们分析状态的密度，光学跃迁和介电函数（实部和虚部）。还研究了光吸收系数，并指出了与磁性杂质有关的间隙中局部峰的出现，对此我们进行了详细分析。

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来源
《Physical review》 |2012年第3期|p.033302.1-033302.4|共4页
作者
A. Boukortt; R. Hayn; F. Virot;
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作者单位

Institut Materiaux Microelectronique Nanosciences de Provence, Aix-Marseille Universite, Faculte St. Jerome, Case 142, F-13397 Marseille Cedex 20, France,Laboratoire d'Elaboration et Caracterisation Physico Mecanique et Metallurgique des Materiaux (ECP3M), Faculte des Sciences et de la Technologie, Universite de Mostaganem, Algeria;

Institut Materiaux Microelectronique Nanosciences de Provence, Aix-Marseille Universite, Faculte St. Jerome, Case 142, F-13397 Marseille Cedex 20, France;

Institut Materiaux Microelectronique Nanosciences de Provence, Aix-Marseille Universite, Faculte St. Jerome, Case 142, F-13397 Marseille Cedex 20, France;

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正文语种 eng
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magnetic semiconductors; optical properties of bulk materials and thin films;

机译：磁性半导体散装材料和薄膜的光学特性;

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1. Effects of growth temperature on the valence, optical and magnetic properties of Mn-doped GaN films grown by metal organic chemical vapor deposition [J] . Cui Xugao, Zhang Jing Optical Materials . 2015,第Auga期

机译：生长温度对金属有机化学气相沉积法生长Mn掺杂GaN薄膜的价，光学和磁性的影响
2. Effects of growth temperature on the valence, optical and magnetic properties of Mn-doped GaN films grown by metal organic chemical vapor deposition [J] . Cui Xugao, Zhang Jing Optical Materials . 2015,第auga期

机译：生长温度对金属有机化学气相沉积法生长Mn掺杂GaN薄膜的价，光学和磁性的影响
3. The effects of oxygen co-doping on structural, magnetic and optical properties of Mn-doped GaN [J] . Hu B., Man B.Y., Liu M., Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 2013,第6期

机译：氧共掺杂对Mn掺杂GaN的结构，磁性和光学性质的影响
4. Optical Properties of Mn-doped GaN [C] . O. Gelhausen, E. Malguth, M. R. Phillips, MRS Meeting . 2004

机译：Mn-掺杂GaN的光学性质
5. A first-principles study of structural, electronic and optical properties of GaN, ZnO and (GaN)1--x(ZnO) x. [D] . Liu, Jian. 2015

机译：GaN，ZnO和（GaN）1-x（ZnO）x的结构，电子和光学性质的第一性原理研究。
6. Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness [O] . Xiaowei Wang, Feng Liang, Degang Zhao, 2020

机译：具有不同GaN盖层厚度InGaN / GaN多量子阱的光学性质的研究
7. Optical Properties of Mn-doped GaN [O] . O. Gelhausen, E. Malguth, M. R. Phillips, 2014

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8. Magnetic and Optical Properties of MN-Doped GaN Thin Films and P-I-N Devices [R] . Reed, M. L. , Luen, M. O. , Bedair, S. M. , 2004

机译：mN掺杂GaN薄膜和p-I-N器件的磁性和光学性质

Optical properties of Mn-doped GaN

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