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Quantum quenches and driven dynamics in a single-molecule device

机译：单分子器件中的量子猝灭和驱动动力学

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The nonequilibrium dynamics of molecular devices is studied in the framework of a generic model for single-molecule transistors: a resonant level coupled by displacement to a single vibrational mode. In the limit of a broad level and in the vicinity of the resonance, the model can be controllably reduced to a form quadratic in bosonic operators, which in turn is exactly solvable. The response of the system to a broad class of sudden quenches and ac drives is thus computed in a nonperturbative manner, providing an asymptotically exact solution in the limit of weak electron-phonon coupling. From the analytic solution, we are able to (1) explicitly show that the system thermalizes following a local quantum quench, (2) analyze in detail the time scales involved, (3) show that the relaxation time in response to a quantum quench depends on the observable in question, and (4) reveal how the amplitude of long-time oscillations evolves as the frequency of an ac drive is tuned across the resonance frequency. Explicit analytical expressions are given for all physical quantities and all nonequilibrium scenarios under study.
机译：在单分子晶体管通用模型的框架内研究了分子器件的非平衡动力学：通过位移耦合到单个振动模式的共振能级。在宽泛的范围内以及在共振附近，可以将模型可控地简化为玻色子算子的二次形式，这又可以精确地求解。因此，可以以非扰动的方式计算系统对各种突然猝灭和交流驱动的响应，从而在弱电子-声子耦合的极限中提供了渐近精确的解决方案。从解析解中，我们能够（1）明确表明系统在局部量子猝灭之后发生热化；（2）详细分析所涉及的时间尺度；（3）表明响应于量子猝灭的弛豫时间取决于（4）揭示了随着交流驱动器频率在谐振频率上的调谐，长时间振荡的幅度如何演变。对于研究中的所有物理量和所有非平衡方案，都给出了明确的分析表达式。

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