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Electronic structure of epitaxial anatase TiO_2 films: Angle-resolved photoelectron spectroscopy study

机译：外延锐钛矿型TiO_2薄膜的电子结构：角分辨光电子能谱研究

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摘要

Synchrotron-radiation angle-resolved photoelectron spectroscopy has been utilized to examine the bulk valence-band structure of anatase TiO_2(001) thin films fabricated on LaAlO_3(100) by pulsed laser deposition. The energy-momentum dispersion relation of O 2p-derived nonbonding, O 2p-Ti 3d a bonding and several n bonding states is determined experimentally. The nonbonding state at the top of the valence band is located at 4.3 eV at the center of the bulk Brillouin zone, and it shifts towards the shallower energies to 3.8 eV at the zone boundary. No other states with binding energies smaller than 3.8 eV are found on any other high-symmetry axes and points. Thus the valence-band maximum is located at the zone boundary. Our finding proves that anatase is an indirect-band-gap semiconductor.
机译：利用同步辐射角分辨光电子能谱研究了通过脉冲激光沉积在LaAlO_3（100）上制备的锐钛矿型TiO_2（001）薄膜的体价带结构。实验确定了O 2p衍生的非键，O 2p-Ti 3d a键和几种n键态的能量-动量色散关系。价带顶部的非键合状态位于整体布里渊区的中心处为4.3 eV，它在区域边界处向较浅的能量移动到3.8 eV。在任何其他高对称轴和点上都没有找到结合能小于3.8 eV的其他状态。因此，价带最大值位于区域边界。我们的发现证明了锐钛矿是一种间接带隙半导体。

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  • 来源
    《Physical review》 |2012年第3期|p.035129.1-035129.6|共6页
  • 作者

    Masato Emori; Mari Sugita; Kenichi Ozawa; Hiroshi Sakama;

  • 作者单位

    Department of Physics, Sophia University, Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan;

    Department of Physics, Sophia University, Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan;

    Department of Chemistry and Materials Science, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152-8551, Japan;

    Department of Physics, Sophia University, Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan;

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  • 正文语种 eng
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  • 关键词

    adsorbed layers and thin films;

    机译：吸附层和薄膜;

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