...
机译:计算随机超流体密度对熔深深度的温度依赖性的影响
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road,Menlo Park, California 94025, USA,Department of Physics, Stanford University, Stanford, California 94305-4045, USA;
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road,Menlo Park, California 94025, USA,Department of Physics, Stanford University, Stanford, California 94305-4045, USA,Department of Applied Physics, Stanford University, Stanford, California 94305-4045, USA;
theories and models of superconducting state; effects of crystal defects, doping and substitution; inhomogeneous superconductors and superconducting systems;
机译:电荷密度波与超导电性并存时的磁穿透深度的温度依赖性
机译:在超导和电荷密度波阶参数存在色散的情况下磁场穿透深度的温度依赖性
机译:质子辐照测量的超导Ca_(0.5)Na_(0.5)Fe_2As_2单晶超流体密度的磁渗透深度测量
机译:超导间隙的温度依赖性和MGB_2的渗透深度
机译:量子多体计算:电子密度泛函理论和超流旋涡的蒙特卡罗研究的改进加权密度近似。
机译:基于数学的实体瘤药物穿透深度计算
机译:随机超流密度对渗透深度温度依赖性影响的计算
机译:随机超流密度对渗透深度温度依赖性影响的计算。