...
首页> 外文期刊>Physical review >Charge fluctuations in single-electron tunneling oscillations
【24h】

Charge fluctuations in single-electron tunneling oscillations

机译:单电子隧穿振荡中的电荷波动

获取原文
获取原文并翻译 | 示例
           

摘要

It has been predicted that in the presence of a sufficiently high dissipati ve environment transport in a small tunnel junction can become extremely regular, giving rise to the phenomenon of single-electron tunneling oscillations. Recent progress in detection of high-frequency current fluctuations and the interest in single-electron sources motivate further investigations on the expected accuracy of the charge oscillations as a function of the impedance of the environment. In this paper we study theoretically the charge-fluctuation spectrum at finite frequency for the system at hand, and investigate its behavior as a function of the external impedance. The evolution and the disappearance of the single-electron oscillations peak is described by analytical and numerical methods.
机译:可以预见的是,在存在足够高的耗散环境的情况下,小隧道结中的运输会变得极为规则,从而引起单电子隧道振荡现象。高频电流波动检测的最新进展以及对单电子源的兴趣促使人们进一步研究电荷振荡的预期精度与环境阻抗的关系。在本文中,我们从理论上研究了手边系统在有限频率下的电荷波动谱,并研究了其行为与外部阻抗的关系。通过解析和数值方法描述了单电子振荡峰的演化和消失。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号