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Intrinsic and precipitate-induced quantum corrections to conductivity in La_(2/3)Sr_(1/3)MnO_3 thin films

机译:La_(2/3)Sr_(1/3)MnO_3薄膜电导率的本征和沉淀诱导量子校正

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摘要

The low-temperature magnetotransport properties of manganite thin films are characterized by the occurrence of resistivity minima, ρ_(min), below 30 K whose origin and especially role of disorder has not yet been explored in detail. In order to contribute to the clarification of the physical mechanism giving rise to the resistivity minimum in these systems, an appropriate concentration (3%, 6%, and 20%) of nanoscaled nonmagnetic ZrO_2 particles are introduced as a secondary phase into La_(2/3)Sr_(1/3)MnO_3 thin films. As the volume density of ZrO_2 precipitates increases, the films show a more pronounced resistivity upturn for T < T_(min). The measured temperature and magnetic field dependence of the resistivity of our samples is in good agreement with a combination of the theory of three-dimensional weak localization and electron-electron interactions. We show that within this frame the observed features of the scattering-related resistivity minimum at low temperature in correlated electron systems can be explained, including its spin dependence, its scattering parameters, and its variation with increasing nonmagnetic disorder.
机译:锰薄膜的低温磁传输特性的特征是在30 K以下出现电阻率最小值ρ_(min),其起源和尤其是无序的作用尚未得到详细探讨。为了有助于澄清在这些系统中产生最小电阻率的物理机理,将适当浓度(3%,6%和20%)的纳米级非磁性ZrO_2颗粒作为次生相引入La_(2 / 3)Sr_(1/3)MnO_3薄膜。随着ZrO_2析出物体积密度的增加,薄膜在T <T_(min)时电阻率上升更为明显。我们样品的电阻率与温度和磁场的相关性与三维弱局部化理论和电子-电子相互作用的理论相吻合。我们表明,在此框架内,可以解释相关电子系统在低温下与散射相关的电阻率最小值的观测特征,包括其自旋相关性,散射参数以及随非磁性无序度增加的变化。

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