Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces

T. Schumann; K.-J. Friedland; M. H. Oliveira Jr.; A. Tahraoui; J. M. J. Lopes; H. Riechert

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Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces

机译：SiC台阶表面上外延石墨烯的各向异性量子霍尔效应

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We investigate the magnetotransport properties of epitaxial graphene on SiC(0001), which exhibits a stepped surface with regular terraces and step edges. We observe an anisotropic behavior in the magnetoresistance measured at high magnetic fields for narrow Hall bars patterned on stepped surfaces. If the Hall bar is aligned parallel to the terraces, the conventional quantum Hall effect behavior is observed. In contrast, a predominantly positive magnetoresistance arises if the current crosses many surface steps. The results can be explained by a model which takes into account inter-Landau-level scattering, which is enhanced in the step edge surface region and may enable electron backscattering from one channel to another on the opposite side, resulting in a positive magnetoresistance.

机译：我们研究了SiC（0001）上外延石墨烯的磁输运性质，该SiC表现出具有规则平台和台阶边缘的台阶表面。我们观察到在阶梯状表面上构图的窄霍尔棒在高磁场下测得的磁阻的各向异性行为。如果霍尔棒平行于平台对齐，则会观察到传统的量子霍尔效应行为。相反，如果电流跨过许多表面台阶，则产生主要为正的磁阻。结果可以由考虑了兰道级散射的模型来解释，该模型在台阶边缘表面区域得到增强，并且可以使电子从一个通道反向散射到另一侧的另一通道，从而产生正磁阻。

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来源
《Physical review》 |2012年第23期|p.235402.1-235402.5|共5页
作者
T. Schumann; K.-J. Friedland; M. H. Oliveira Jr.; A. Tahraoui; J. M. J. Lopes; H. Riechert;
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作者单位

Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

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正文语种 eng
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关键词
magnetoresistance;

机译：磁阻;

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1. Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC [J] . Endo Akira, Komori Fumio, Morita Kouhei, Journal of Low Temperature Physics . 2015,第3a4期

机译：在SiC上生长的外延石墨烯阶梯式衬底中的高各向异性平行导电
2. Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC [J] . Akira Endo, Fumio Komori, Kouhei Morita, Journal of Low Temperature Physics . 2015,第3a4期

机译：在SiC上生长的外延石墨烯阶梯式衬底中的高度各向异性平行导电
3. Suppressed compressibility of quantum Hall effect edge states in epitaxial graphene on SiC [J] . Sergey Slizovskiy, Vladimir I. Falko Physical review. B, Condensed Matter And Materals Physics . 2018,第7期

机译：SiC外延石墨烯中量子霍尔效应边缘态的可压缩性
4. Impact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001) [C] . F. Giannazzo, I. Deretzis, A. La Magna, ECSCRM 2012 . 2013

机译：衬底步骤和单层双层结的影响在4H-SiC（0001）上的外延石墨烯中的电子输送
5. Growth of Epitaxial Graphene on Single Crystal Copper Surfaces by Chemical Vapor Deposition [D] . Mowll, Tyler Rutley. 2018

机译：化学气相沉积法在单晶铜表面上生长外延石墨烯
6. Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation [O] . Albert F. Rigosi, Chieh-I Liu, Bi Yi Wu, -1

机译：聚对二甲苯钝化技术研究外延石墨烯表面电导率和量子霍尔器件的稳定性
7. Suppressed compressibility of quantum Hall effect edge states in epitaxial graphene on SiC [O] . Slizovskiy, Sergey, Fal'ko, Vladimir I. 2017

机译：抑制量子霍尔效应边缘态的可压缩性 siC上的外延石墨烯

Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces

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