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Mechanism of asymmetric lineshape broadening in GaAs_(1-x)N_x Raman spectra

机译:GaAs_(1-x)N_x拉曼光谱中不对称线形展宽的机理

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摘要

Resonance Raman spectroscopy is used to probe the asymmetric broadening of the LO phonon linewidth in a dilute GaAs_(1-x)N_x alloy (x = 0.41%). Electronic Raman scattering from a broad continuum is observed that gets enhanced concurrently with the LO phonon linewidth under resonance. The Fano interaction between the LO phonon and the electronic continuum is used to develop a model that satisfactorily explains the origin of the asymmetric LO phonon linewidth broadening in this abnormal alloy as arising due to coupling between the discrete and the continuum configurations.
机译:共振拉曼光谱用于探测稀GaAs_(1-x)N_x合金(x = 0.41%)中LO声子线宽的不对称加宽。观察到来自广泛连续体的电子拉曼散射在共振条件下与LO声子线宽同时增加。 LO声子和电子连续体之间的Fano相互作用用于建立一个模型,该模型令人满意地解释了这种不对称合金中不对称LO声子线宽变宽的起源,这是由于离散和连续体构型之间的耦合引起的。

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  • 来源
    《Physical review》 |2012年第4期|p.045209.1-045209.7|共7页
  • 作者单位

    National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA;

    National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA;

    National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA;

    National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    infrared and raman spectra;

    机译:红外光谱和拉曼光谱;

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