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Route towards huge magnetoresistance in doped polymers

机译：在掺杂聚合物中实现巨大的磁阻的途径

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Room-temperature magnetoresistance of the order of 10% has been observed in organic semiconductors. We predict that even larger magnetoresistance can be realized in suitably synthesized doped conjugated polymers. In such polymers, ionization of dopants creates free charges that recombine with a rate governed by a competition between an applied magnetic field and random hyperfine fields. This leads to a spin-blocking effect that depends on the magnetic field. We show that the combined effects of spin blocking and charge blocking, the fact that two free charges cannot occupy the same site, lead to a magnetoresistance of almost two orders of magnitude. This magnetoresistance occurs even at vanishing electric field and is therefore a quasiequilibrium effect. The influences of the dopant strength, energetic disorder, and interchain hopping are investigated. We find that the dopant strength and energetic disorder have only little influence on the magnetoresistance. Interchain hopping strongly decreases the magnetoresistance because it can lift spin-blocking and charge-blocking configurations that occur in strictly one-dimensional transport. We provide suggestions for realization of polymers that should show this magnetoresistance.
机译：在有机半导体中已观察到大约10％的室温磁阻。我们预测，在适当合成的掺杂共轭聚合物中可以实现更大的磁阻。在这样的聚合物中，掺杂剂的电离会产生自由电荷，该自由电荷的复合速率受施加的磁场和随机超精细场之间的竞争控制。这导致取决于磁场的自旋阻挡效应。我们证明了自旋阻断和电荷阻断的综合作用，即两个自由电荷不能占据同一位点的事实，导致了几乎两个数量级的磁阻。该磁阻即使在消失的电场下也会发生，因此是准平衡效应。研究了掺杂剂强度，能量紊乱和链间跳跃的影响。我们发现掺杂强度和高能紊乱对磁阻的影响很小。链间跳跃会极大地降低磁阻，因为它可以解除严格在一维传输中发生的自旋阻滞和电荷阻滞构型。我们提供了实现该磁阻的聚合物的建议。

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