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首页> 外文期刊>Physical review >Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories
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Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories

机译：基于双极电阻切换氧化物的存储器中非易失性电阻状态的异常时间弛豫

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摘要

We have studied long time relaxation effects on the nonvolatile resistance state produced by resistive switching in devices composed by ceramic YBa_2Cu_3O_(7-δ) and La_(0.7)Sr_(0.3)MnO_3/metal (Au, Pt, Ag) interfaces. The time relaxation can be described by a stretched exponential law that is characterized by a power exponent (n) close to 1/2. We found that the characteristic time (r) increases with increasing temperature and applied power. The origin of the relaxation effect can be related to oxygen diffusion processes, which were recently associated with the mechanism of bipolar switching in complex oxide interfaces. We argue that the anomalous behavior can be understood in terms of diffusion of oxygen ions (or oxygen vacancies) on a two-dimensional surface with a temperature-dependent density of trapping centers, which may correspond, physically, to the diffusion along grain boundaries.
机译：我们已经研究了由陶瓷YBa_2Cu_3O_（7-δ）和La_（0.7）Sr_（0.3）MnO_3 /金属（Au，Pt，Ag）界面组成的器件中的电阻切换所产生的非易失性电阻状态的长时间弛豫效应。时间松弛可以通过拉伸指数定律来描述，该指数定律的特征是幂指数（n）接近1/2。我们发现特征时间（r）随着温度和施加功率的增加而增加。弛豫效应的起源可能与氧扩散过程有关，氧扩散过程最近与复杂氧化物界面中的双极转换机制有关。我们认为，异常行为可以用二维离子表面上氧离子（或氧空位）的扩散来理解，其俘获中心的密度与温度有关，这在物理上可能对应于沿晶界的扩散。

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  • 来源
    《Physical review》 |2012年第10期|p.104426.1-104426.5|共5页
  • 作者

    A. Schulman; M. J. Rozenberg; C. Acha;

  • 作者单位

    Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires and Instituto de Fisica de Buenos Aires, Consejo Nacional de Investigaciones Cientificas y Tecnicas, Pabellon I, Ciudad Universitaria, C1428EHA Buenos Aires, Argentina;

    Laboratoire de Physique des Solides, UMR8502 Universite Paris-Sud, Orsay 91405, France and Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires and Instituto de Fisica de Buenos Aires, Consejo Nacional de Investigaciones Cientificas y Tecnicas, Pabellon I, Ciudad Universitaria, C1428EHA Buenos Aires, Argentina;

    Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires and Instituto de Fisica de Buenos Aires, Consejo Nacional de Investigaciones Cientificas y Tecnicas, Pabellon I, Ciudad Universitaria, C1428EHA Buenos Aires, Argentina;

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  • 关键词

    manganites; electronic transport in interface structures; diffusion in solids; cuprate superconductors (high-Tc and insulating parent compounds);

    机译：锰;界面结构中的电子传输;固体中的扩散;铜酸盐超导体（高Tc和绝缘母体化合物）;

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