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Integer quantum Hall effect in gapped single-layer graphene

机译：带间隙单层石墨烯的整数量子霍尔效应

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摘要

Analytical expressions for the Hall conductivity σ_(yx) and the longitudinal resistivity p_(xx) are derived in gapped, single-layer graphene using linear response theory. The gap 2△, described by a mass term, is induced by a substrate made of hexagonal boron nitride (h-BN) and produces two levels at ±△. It is shown that σ_(yx) has the same form as for a graphene sample supported by a common substrate without a mass term. The differences are a shift in the energy spectrum, which is not symmetric with respect to the Dirac point for either valley due to the gap, the absence of a zero-energy Landau level, and the nonequivalence of the K and K' valleys. In addition, the dispersion of the energy levels, caused by electron scattering by impurities, modifies mostly plateaus due to the levels at ±△. It is shown that the resistivity p_(xx) exhibits an oscillatory dependence on the electron concentration. The main difference with the usual graphene samples, on SiO_2 substrates, occurs near zero concentration, as the energy spectra differ mostly near the Dirac point.
机译：利用线性响应理论，在带间隙的单层石墨烯中推导了霍尔电导率σ_（yx）和纵向电阻率p_（xx）的解析表达式。用质量术语描述的间隙2△由六方氮化硼（h-BN）制成的基板引起，并在±△处产生两个能级。结果表明，σ_（yx）的形式与无质量项的普通衬底支撑的石墨烯样品的形式相同。差异是能量谱的偏移，由于间隙，不存在零能量的朗道能级以及K和K'谷的不等价，这两个谷相对于狄拉克点不对称。另外，由于电子在杂质中的散射而导致的能级分散，主要由于±△的能级而使平台稳定。结果表明，电阻率p_（xx）对电子浓度表现出振荡依赖性。与通常的石墨烯样品在SiO_2衬底上的主要区别是在零浓度附近，因为能量谱在狄拉克点附近差异很大。

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  • 来源
    《Physical review》 |2012年第11期|p.115432.1-115432.8|共8页
  • 作者

    P. M. Krstajic; P. Vasilopoulos;

  • 作者单位

    Institute of Microelectronic Technologies and Single Crystals (IHTM), University of Belgrade, Njegoseva 12, 11000 Belgrade, Serbia;

    Concordia University, Department of Physics, 7141 Sherbrooke Quest, Montreal, Quebec, Canada H4B 1R6;

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  • 正文语种 eng
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  • 关键词

    quantum hall effects;

    机译：量子霍尔效应;

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