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首页> 外文期刊>Physical review >Chemical bonding, conductive network, and thermoelectric performance of the ternary semiconductors Cu_2SnZ_3 (X = Se, S) from first principles
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Chemical bonding, conductive network, and thermoelectric performance of the ternary semiconductors Cu_2SnZ_3 (X = Se, S) from first principles

机译:从第一原理出发,三元半导体Cu_2SnZ_3(X = Se,S)的化学键合,导电网络和热电性能

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摘要

The p-type Cu_2SnX_3 (x = Se, S) compounds are known experimentally to be good thermoelectric materials, although the reasons for this good performance in an adamantine-derived crystal structure are not well understood. Here, we demonstrate the existence of a three-dimensional (3D) hole conductive network in these ternary diamondlike Cu_2SnX_3(x = Se, S) semiconductors using ab initio calculations, and identify the features of the electronic structure responsible for this good performance. We also provide results as a function of doping level to find the regime where the highest performance will be realized and estimate the maximum figure of merit, Z T. Our results clearly show that the strong hybridization between 3d orbitals from copper and p orbitals from selenium or sulfur at the upper valence band leads to the 3D p-type hole transport channel, mainly consisting of Cu-X and X-X networks in Cu_2SnX_3 (x = Se, S). The resulting heavy, but still conductive, hybridized bands of Cu d-chalcogen p character are highly favorable for thermoelectric performance. The electrical transport properties of these p-type materials are mainly determined by these bands and have been investigated by Boltzmann transport methods. The optimal doping levels of Cu_2SnX_3 are estimated to be around 0.1 holes per unit cell at 700 K. The theoretical figure of merit ZT has been predicted.
机译:尽管尚不十分了解在金刚烷衍生的晶体结构中具有这种良好性能的原因,但从实验上已知p型Cu_2SnX_3(x = Se,S)化合物是良好的热电材料。在这里,我们使用从头算的方法证明了这些三元类金刚石Cu_2SnX_3(x = Se,S)半导体中三维(3D)空穴导电网络的存在,并确定了负责这种良好性能的电子结构的特征。我们还提供了作为掺杂水平函数的结果,以找到实现最高性能的体系,并估计最高品质因数ZT。我们的结果清楚地表明,铜的3d轨道与硒的p轨道之间存在强杂交或高价带处的硫导致3D p型空穴传输通道,该通道主要由Cu_2SnX_3中的Cu-X和XX网络组成(x = Se,S)。所得的重的但仍导电的Cu d-硫族元素p杂化带对热电性能非常有利。这些p型材料的电输运性能主要由这些带决定,并已通过玻耳兹曼输运方法进行了研究。估计Cu_2SnX_3的最佳掺杂水平在700 K时约为每单位晶胞0.1个孔。ZT的理论品质因数已得到预测。

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  • 来源
    《Physical review》 |2012年第15期|155201.1-155201.14|共14页
  • 作者单位

    State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

    Materials Science and Engineering Department, University of Washington, Seattle, WA 98195-2120, USA;

    Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056, USA;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    thermoelectric and thermomagnetic effects; semiconductor compounds; narrow-band systems; intermediate-valence solids; density functional theory, local density approximation, gradient and other corrections;

    机译:热电和热磁效应;半导体化合物窄带系统;中价固体;密度泛函理论;局部密度近似;梯度和其他校正;

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