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Manifestation of chiral tunneling at a tilted graphene p-n junction

机译:倾斜的石墨烯p-n连接处的手性隧穿的表现

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Electrons in graphene follow unconventional trajectories at p-n junctions, driven by their pseudospintronic degree of freedom. The prominent angular dependence of transmission is significant, capturing the chiral nature of the electrons and culminating in unit transmission at normal incidence (Klein tunneling). We theoretically show that such chiral tunneling can be directly observed from the junction resistance of a tilted interface probed with separate split gates. The junction resistance is shown to increase with tilt, in agreement with recent experimental evidence. The tilt dependence arises because of the misalignment between modal density and the anisotropic transmission lobe oriented perpendicular to the tilt. A critical determinant is the presence of specular edge scattering events that can completely reverse the angle dependence. The absence of such reversals in the experiments indicates that these edge effects are not overwhelmingly deleterious, making the premise of transport governed by electron "optics" in graphene an exciting possibility.
机译:石墨烯中的电子在其伪自旋电子学自由度的驱动下在p-n结处遵循非常规轨迹。传输的显着角度依赖性非常重要,它捕获了电子的手性,并在法向入射时最终达到单位传输(克莱因隧穿)。我们从理论上表明,这种手性隧穿可以从用单独的分离栅探测的倾斜界面的结电阻直接观察到。与最近的实验证据一致,结电阻随倾斜度而增加。由于模态密度与垂直于倾斜方向定向的各向异性透射波瓣之间的不对准而产生倾斜依赖关系。一个关键的决定因素是镜面边缘散射事件的存在,可以完全逆转角度依赖性。在实验中没有这种逆转的现象表明,这些边缘效应并没有带来极大的危害,这使得在石墨烯中以电子“光学”为主导的传输前提成为可能。

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