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首页> 外文期刊>Physical review >Interaction of excitons with carriers accelerated by the electric field of a surface acoustic wave in type-II GaAs/AlAs superlattices
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Interaction of excitons with carriers accelerated by the electric field of a surface acoustic wave in type-II GaAs/AlAs superlattices

机译：II型GaAs / AlAs超晶格中激子与被表面声波电场加速的载流子的相互作用

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摘要

The influence of the lateral electric field of the surface acoustic wave (SAW) on the kinetics of the exciton photoluminescence (PL) in the X_z and X_XY type-II GaAs/AlAs superlattices has been studied in the present work. It has been found that the application of the SAW electric field leads first to the enhancement of the PL intensity of free excitons and then to the acceleration of the PL kinetics of all types of exciton transitions. It has been shown that both effects result from the interaction of the carriers ejected by the SAW from the shallow states formed by the quantum well width fluctuations with each other and excitons. In the first case the ejected carriers form an appreciable amount of excitons that leads to the increase in their PL intensity. In the second case the collision of these carriers with the excitons described by Townsend-Shockley law results in the delocalization of the excitons with their subsequent capture by the nonradiative centers, which leads to the acceleration of the kinetics of the excitonic PL.
机译：本文研究了X_z和X_XY II型GaAs / AlAs超晶格中表面声波（SAW）的横向电场对激子光致发光（PL）动力学的影响。已经发现，SAW电场的施加首先导致自由激子的PL强度的增强，然后导致所有类型的激子跃迁的PL动力学的加速。已经表明，这两种效应都是由于由SAW发射的载流子与由量子阱宽度涨落形成的浅层状态和激子相互作用而产生的。在第一种情况下，弹出的载流子会形成大量激子，从而导致其PL强度增加。在第二种情况下，这些载流子与Townsend-Shockley法则所描述的激子的碰撞导致激子离域化，随后它们被非辐射中心捕获，这导致激子PL动力学加速。

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