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Antiband instability on vicinal Si(111) under the condition of diffusion-limited sublimation

机译：扩散受限升华条件下邻域Si（111）的抗谱带不稳定性

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摘要

In this paper, we investigate the antiband instability on vicinal Si(111) surfaces with different angles of misorientation. It is known that prolonged direct current-annealing of Si( 1 1 1) results in the formation of antibands; i.e., the step bunches with the opposite slope to the primary bunches. We provide a theoretical description of antiband formation via the evolution of the atomic steps' shape. We also derive a criterion for the onset of the antiband instability under the conditions of sublimation controlled by slow adatom surface diffusion. We examine this criterion experimentally by studying the initial stage of the antiband formation at a constant temperature of 1270℃ while systematically varying the applied electromigration field. The experiment strongly supports the validity of the derived theoretical criterion and indicates the importance of accounting for the factor of critical field in the theoretical modeling of step bunching or antiband instabilities. Deduced from the comparison of theory and experiment, the Si surface atoms' effective charge cannot exceed double the elementary charge, set by the lower limit of kinetic characteristic length d_s = 0.3 nm. Using d_s = 1.7 - 4.5 nm draws values of the effective charge in line with the values reported in earlier studies.
机译：在本文中，我们研究了具有不同取向错误的邻近Si（111）表面的抗带不稳定性。众所周知，长时间的Si（1 1 1）直流电退火会导致形成反带；即台阶束与主要束的斜率相反。我们提供了通过原子台阶形状演变来形成抗带的理论描述。我们还导出了在缓慢的原子表面扩散控制的升华条件下抗带不稳定性开始的标准。我们通过研究在1270℃的恒定温度下反带形成的初始阶段，同时系统地改变施加的电迁移场，来实验地检验该标准。实验有力地证明了所推导出的理论标准的有效性，并指出了在步聚或反谱带不稳定性理论模型中考虑临界场因素的重要性。从理论和实验的比较得出，Si表面原子的有效电荷不能超过基本电荷的两倍，这是由动力学特征长度d_s = 0.3 nm的下限设定的。使用d_s = 1.7-4.5 nm绘制的有效电荷值与早期研究中报道的值一致。

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  • 来源
    《Physical review》 |2012年第19期|195317.1-195317.7|共7页
  • 作者

    V. Usov; S. Stoyanov; C. o Coileain; o. Toktarbaiuly; . V. Shvets;

  • 作者单位

    School of Physics, Trinity College Dublin, Dublin 2, Ireland,Centrefor Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Ireland;

    Department of Phase Transitions and Crystal Growth, Institute of Physical Chemistry, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria;

    School of Physics, Trinity College Dublin, Dublin 2, Ireland,Centrefor Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Ireland;

    School of Physics, Trinity College Dublin, Dublin 2, Ireland,Centrefor Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Ireland;

    School of Physics, Trinity College Dublin, Dublin 2, Ireland,Centrefor Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Ireland;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    diffusion; interface formation; atomic force microscopy (AFM); semiconductor surfaces;

    机译：扩散;界面形成;原子力显微镜（AFM）;半导体表面;

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