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Structure and zero-dimensional polariton spectrum of natural defects in GaAs/AIAs microcavities

机译：GaAs / AIAs微腔中自然缺陷的结构和零维极化子谱

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摘要

We present a correlative study of structural and optical properties of natural defects in planar semiconductor microcavities grown by molecular beam epitaxy, which are showing a localized polariton spectrum as reported in Zajac et al. [Phys. Rev. B 85, 165309 (2012)]. The three-dimensional spatial structure of" the defects was studied using combined focused ion beam (FIB) and scanning electron microscopy (SEM). We find that the defects originate from a local increase of a GaAs layer thickness. Modulation heights of up to 140 nm for oval defects and 90 nm for round defects are found, while the lateral extension is about 2 μm for oval and 4 μm for round defects. The GaAs thickness increase is attributed to a Ga droplet deposited during growth due to Ga cell spitting. Following the droplet deposition, the thickness modulation expands laterally while reducing its height, yielding oval to round mounds of the interfaces and the surface. With increasing growth temperature, the ellipticity of the mounds is decreasing and their size is increasing. This suggests thai the expansion is related to the surface mobility of Ga. Which, with increasing temperature, is increasing and reducing its anisotropy between the [110] and [110] crystallographic directions. Comprehensive data consisting of surface profiles of defects measured using differential interference contrast microscopy, volume information obtained using F1B/SEM, and characterization of the resulting confined polariton spectrum are presented.
机译：我们提出了一种通过分子束外延生长的平面半导体微腔中自然缺陷的结构和光学性质的相关研究，这显示了Zajac等人报道的局部极化子谱。 [物理B 85，165309（2012）。利用聚焦离子束（FIB）和扫描电子显微镜（SEM）对缺陷的三维空间结构进行了研究。我们发现缺陷源自GaAs层厚度的局部增加。调制高度高达140椭圆形缺陷为90 nm，圆形缺陷为90 nm，椭圆形的横向延伸约为2μm，圆形缺陷的横向延伸约为4μm，GaAs厚度的增加归因于生长过程中由于Ga细胞喷溅而沉积的Ga液滴。液滴的沉积，厚度调制在横向扩展，同时降低高度，产生椭圆形至圆形的界面和表面丘；随着生长温度的升高，丘的椭圆度逐渐减小，尺寸逐渐增大。与Ga的表面迁移率有关。随着温度的升高，Ga的表面迁移率在[110]和[110]结晶方向之间增加和减小。介绍了由差动干涉对比显微镜测量的缺陷表面轮廓，使用F1B / SEM获得的体积信息以及所得限制极化子光谱的特征组成的综合数据。

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