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Edge state effects in junctions with graphene electrodes

机译：石墨烯电极结中的边缘状态效应

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摘要

We consider plane junctions with graphene electrodes, which are formed by a single-level system ("molecule") placed between the edges of two single-layer graphene half planes. We calculate the edge Green functions of the electrodes and the corresponding lead self-energies for the molecular levels in the cases of semi-infinite single-layer electrodes with armchair and zigzag edges. We show two main effects: first, a peculiar energy-dependent level broadening, reflecting at low energies the linear energy dependence of the bulk density of states in graphene, and, second, the shift and splitting of the molecular level energy, especially pronounced in the case of the zigzag edges due to the influence of the edge states. These effects give rise to peculiar conductance features at finite bias and gate voltages.
机译：我们考虑与石墨烯电极的平面结，其由放置在两个单层石墨烯半平面的边缘之间的单级系统（“分子”）形成。在具有扶手椅和锯齿形边缘的半无限单层电极的情况下，我们计算电极的边缘格林函数以及相应的分子水平的铅自能。我们表现​​出两个主要影响：首先，一个特定的能量依赖性能级展宽，在低能量下反映了石墨烯中状态的体密度的线性能量依赖性，第二，分子能级的移动和分裂，特别是在之字形边缘的情况是由于边缘状态的影响。这些效应在有限的偏置和栅极电压下会产生特殊的电导特性。

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  • 来源
    《Physical review》 |2012年第19期|195425.1-195425.7|共7页
  • 作者

    Dmitry A. Ryndyk; Jan Bundesmann; Ming-Hao Liu; Klaus Richter;

  • 作者单位

    Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany,Institute for Materials Science, Dresden University of Technology, D-01069 Dresden, Germany;

    Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany;

    Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany;

    Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    electronic transport in nanoscale materials and structures; molecular electronic devices;

    机译：纳米材料和结构中的电子传输;分子电子器件;

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