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首页> 外文期刊>Physical review >Phase transitions in ferroelectric Pb_(0.5)Sr_(0.5)TiO_3 films probed by spectroscopic ellipsometry
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Phase transitions in ferroelectric Pb_(0.5)Sr_(0.5)TiO_3 films probed by spectroscopic ellipsometry

机译：椭偏光谱法探测铁电Pb_（0.5）Sr_（0.5）TiO_3薄膜的相变

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摘要

Phase transitions occurring in 130-nm-thick films of perovskite-structure ferroelectric Pb_(0.5)Sr_(0.5)TiO_3 are experimentally studied by combining spectroscopic ellipsometry and low-frequency dielectric analysis. Poly-crystalline and polydomain epitaxial films with relaxed misfit strain and columnar microstructure are investigated. The paraelectric and the ferroelectric states, and the temperatures and widths of the paraelectric-to-ferroelectric phase transitions, are identified from the temperature evolution of refractive index measured in transparency range. The temperatures at which transitions start on cooling are found to be considerably higher than the temperatures of the dielectric peaks. In contrast to the broad dielectric peaks, the transition width of 60 K in the polycrystalline film and that of 20 K in the polydomain epitaxial film are revealed. The discrepancies between optical and dielectric data are explained by the influence of extrinsic factors on the low-frequency response of the thin-film capacitors. It is suggested that fundamental mechanisms of ferroelectric phase transitions in thin films can be revealed by studies of thermo-optical properties.
机译：结合椭圆偏振光谱法和低频介电分析技术，对钙钛矿结构铁电体Pb_（0.5）Sr_（0.5）TiO_3的130 nm厚膜中发生的相变进行了实验研究。研究了具有松弛失配应变和柱状微观结构的多晶和多畴外延膜。根据在透明范围内测得的折射率的温度演变，可以确定顺电和铁电状态，以及顺电到铁电相变的温度和宽度。发现从冷却开始转变的温度比介电峰的温度高得多。与宽的介电峰相反，在多晶膜中显示出60 K的跃迁宽度，在多畴外延膜中显示出20 K的跃迁宽度。光学和介电数据之间的差异是由外在因素对薄膜电容器低频响应的影响来解释的。建议通过研究热光性能可以揭示薄膜中铁电相变的基本机理。

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  • 来源
    《Physical review》 |2012年第22期|224105.1-224105.6|共6页
  • 作者

    M. Tyunina; A. Dejneka; D. Chvostova; J. Levoska; M. Plekh; L. Jastrabik;

  • 作者单位

    Microelectronics and Materials Physics Laboratories, University of Oulu, P. O. Box 4500, FI-90014 Oulun yliopisto, Finland,Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic;

    Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic;

    Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic;

    Microelectronics and Materials Physics Laboratories, University of Oulu, P. O. Box 4500, FI-90014 Oulun yliopisto, Finland;

    Microelectronics and Materials Physics Laboratories, University of Oulu, P. O. Box 4500, FI-90014 Oulun yliopisto, Finland;

    Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic;

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