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首页> 外文期刊>Physical review >Decoherence mechanisms of ~(209)Bi donor electron spins in isotopically pure ~(28)Si
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Decoherence mechanisms of ~(209)Bi donor electron spins in isotopically pure ~(28)Si

机译：〜（209）Bi供体电子自旋在同位素纯〜（28）Si中的退相干机理

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摘要

Bismuth (~(209)Bi) is the deepest group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin qubit compared to the more common phosphorus donor. Most previous studies on Si:Bi have been performed using natural silicon where linewidths and electron spin coherence times are limited by the presence of ~(29)Si impurities. Here, we describe electron spin resonance (ESR) and electron nuclear double resonance (ENDOR) studies on ~(209)Bi in isotopically pure ~(28)Si. ESR and ENDOR linewidths, transition probabilities, and coherence times are understood in terms of the spin Hamiltonian parameters showing a dependence on field and m_1 of the ~(209)Bi nuclear spin. We explore various decoherence mechanisms applicable to the donor electron spin, measuring coherence times up to 700 ms at 1.7 K at X band, comparable with ~(28)Si:P. Importantly, the coherence times we measure follow closely to the calculated field gradients of the transition frequencies (df/dB), providing a strong motivation to explore "clock" transitions where coherence lifetimes could be further enhanced.
机译：铋（〜（209）Bi）是硅中最深的V族供体，具有最极端的特性，例如9/2核自旋和1.5 GHz超精细耦合。与更常见的磷供体相比，这些导致了Si：Bi供体电子自旋量子位的若干潜在优势。以前关于Si：Bi的大多数研究都是使用天然硅完成的，其线宽和电子自旋相干时间受〜（29）Si杂质的存在限制。在这里，我们描述了对同位素纯〜（28）Si中〜（209）Bi的电子自旋共振（ESR）和电子核双共振（ENDOR）研究。 ESR和ENDOR线宽，跃迁概率和相干时间可以用自旋哈密顿量参数表示，该参数显示对〜（209）Bi核自旋的场和m_1的依赖性。我们探索了适用于施主电子自旋的各种去相干机制，测量了在X波段1.7 K处700ms的相干时间，与〜（28）Si：P相当。重要的是，我们测量的相干时间紧随转换频率（df / dB）的计算场梯度，从而为探索“时钟”跃迁提供了强大的动力，从而可以进一步提高相干寿命。

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  • 来源
    《Physical review》 |2012年第24期|245301.1-245301.5|共5页
  • 作者

    Gary Wolfowicz; Stephanie Simmons; Alexei M. Tyryshkin; Richard E. George; Helge Riemann; Nikolai V. Abrosimov; Peter Becker; Hans-Joachim Pohl; Stephen A. Lyon; Mike L. W. Thewalt; John J. L. Morton;

  • 作者单位

    London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom,Department of Materials, Oxford University, Oxford OX1 3PH, United Kingdom;

    London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom,Department of Materials, Oxford University, Oxford OX1 3PH, United Kingdom;

    Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

    Department of Materials, Oxford University, Oxford OX1 3PH, United Kingdom;

    Institute for Crystal Growth, Max-Born Strasse 2, D-12489 Berlin, Germany;

    Institute for Crystal Growth, Max-Born Strasse 2, D-12489 Berlin, Germany;

    Physikalisch-Technische Bundesanstalt, D-38116 Braunschweig, Germany;

    Vitcon Projectconsult GmbH, 07745 Jena, Germany;

    Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

    Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada;

    London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom,Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;

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  • 正文语种 eng
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  • 关键词

    ions and impurities: general; quantum information; elemental semiconductors; electron-nuclear double resonance (ENDOR), electron double resonance (ELDOR);

    机译：离子和杂质：一般;量子信息;元素半导体电子核双共振（ENDOR）;电子双共振（ELDOR）;

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