g-factor anisotropy in a GaAs/Al_xGa_(1-x) As quantum well probed by electron spin resonance

Yu. A. Nefyodov; A. V. Shchepetilnikov; I. V. Kukushkin; W. Dietsche; S. Schmult

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g-factor anisotropy in a GaAs/Al_xGa_(1-x) As quantum well probed by electron spin resonance

机译：电子自旋共振探测GaAs / Al_xGa_（1-x）As量子阱中的g因子各向异性

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The anisotropy of electron g-factor is investigated for several GaAs/Al_xGa_(1-x)As heterostructures using an electrically detected electron spin resonance technique at liquid helium temperature. For a modulation-doped 25-nm single quantum well with electron density n = 4 × 10~(11) cm~(-2) we extracted an out-of-plane g-factor value of |g_(zz)| = 0.410 and in-plane values of |g_(yy)| = 0.359 and |g_(xx)| = 0.289. In addition, linear in magnetic field corrections to the g-factor components were also extracted and strong anisotropy in their values was established.

机译：在液氦温度下，通过电检测电子自旋共振技术研究了几种GaAs / Al_xGa_（1-x）As异质结构的电子g因子各向异性。对于电子密度为n = 4×10〜（11）cm〜（-2）的调制掺杂的25 nm单量子阱，我们提取了| g_（zz）|的面外g因子值。 = 0.410，且面内值为| g_（yy）| = 0.359和| g_（xx）| = 0.289。此外，还提取了对g因子分量的线性磁场校正，并建立了其值的强各向异性。

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来源
《Physical review》 |2011年第4期|p.041307.1-041307.4|共4页
作者
Yu. A. Nefyodov; A. V. Shchepetilnikov; I. V. Kukushkin; W. Dietsche; S. Schmult;
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作者单位

Institute of Solid State Physics RAS, 142432 Chernogolovka, Moscow District, Russia;

Institute of Solid State Physics RAS, 142432 Chernogolovka, Moscow District, Russia;

Institute of Solid State Physics RAS, 142432 Chernogolovka, Moscow District, Russia;

Max-Planck-Institutfur Festkorperforschung, Heisenbergstr. I, 70569 Stuttgart, Germany;

Max-Planck-Institutfur Festkorperforschung, Heisenbergstr. I, 70569 Stuttgart, Germany;

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正文语种 eng
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collective excitations; magnetoresistance; electron paramagnetic resonance and relaxation;

机译：集体激发;磁阻;电子顺磁共振和弛豫;

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机译：GaAs / Al_xGa_（1-x）As量子线中的电子兰德g因子
2. Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty Al_xGa_(1-x)As/GaAs/Al_xGa_(1-x)As quantum well: From the diffusive to the ballistic regime [J] . V. T. Renard, I. V. Gornyi, O. A. Tkachenko, Physical review. B, Condensed Matter And Materials Physics . 2005,第7期

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3. Overhauser Effect and Anisotropy of Electron Spin G-factor in GaAs / AlGaAs Quantum Wells [J] . T. Ito P. Verma Journal of Automation, Mobile Robotics & Intelligent Systems . 2009,第4期

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5. Far-infrared studies of electron-electron interactions in Si-doped GaAs/AlGaAs multiple quantum wells. [D] . Jiang, Zhenxin. 1997

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7. Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells [O] . Hübner, J., Kunz, S., Oertel, S., 2011

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g-factor anisotropy in a GaAs/Al_xGa_(1-x) As quantum well probed by electron spin resonance

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