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Acoustic and optical phonon scattering in a single In(Ga)As quantum dot

机译:单个In(Ga)As量子点中的声子和声子声子散射

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摘要

Coupling of acoustic and optical phonons to excitons in single InGaAs/GaAs quantum dots is investigated in detail experimentally and theoretically as a function of temperature. For the theoretical description of the luminescence spectrum, including acoustic and optical phonon scattering, we used the exactly solvable independent boson model. Surprisingly, only GaAs bulk-type longitudinal-optical (LO) phonons are detected in experiment. A quantitatively correct theoretical description of the optical-phonon replica is obtained by including a limited lifetime of the phonons and the dispersion of the LO phonon energy. Similarly, a numerically correct description of the acoustic phonon wings is again based on GaAs bulk material parameters for the phonon dispersion and deformation coupling. In addition, the line shape of the calculated spectra agrees with experiment only when realistic wave functions (e.g., based on eight-band k p theory) are used for the electron-phonon coupling matrix elements. Gaussian wave functions describing the ground state of a harmonic oscillator fail to describe high-energy tails. Thus, fundamental insights of importance for the correct prediction of properties of nonclassical light sources, based on semiconductor nanostructures, are obtained.
机译:根据温度和温度,通过实验和理论详细研究了单个InGaAs / GaAs量子点中声子和光学声子与激子的耦合。对于包括声和光声子散射在内的发光光谱的理论描述,我们使用了可精确求解的独立玻色子模型。令人惊讶的是,在实验中仅检测到GaAs体型纵向光学(LO)声子。通过包括有限的声子寿命和LO声子能量的色散,可以获得对光声子副本的定量正确的理论描述。类似地,对声子声子翼的数值正确描述再次基于用于声子色散和形变耦合的GaAs块体材料参数。另外,仅当将实际的波函数(例如,基于八频带k p理论)用于电子-声子耦合矩阵元素时,所计算的光谱的线形才与实验一致。描述谐波振荡器基态的高斯波函数无法描述高能尾波。因此,获得了对基于半导体纳米结构正确预测非经典光源特性的重要性的基本见解。

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  • 来源
    《Physical review》 |2011年第4期|p.041304.1-041304.4|共4页
  • 作者单位

    Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

    Institut fuer theoretische Physik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

    Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

    Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

    Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

    Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

    Institute of Semiconductor Physics, Lavrenteva av 13, Novosibirsk 630090, Russia;

    Institute of Semiconductor Physics, Lavrenteva av 13, Novosibirsk 630090, Russia;

    Institute of Semiconductor Physics, Lavrenteva av 13, Novosibirsk 630090, Russia;

    Institut fuer theoretische Physik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany,Department of Chemistry, University of California, Irvine, California 92697-2025, USA;

    Institute of Semiconductor Physics, Lavrenteva av 13, Novosibirsk 630090, Russia;

    Institut fuer theoretische Physik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

    Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

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  • 正文语种 eng
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  • 关键词

    quantum dots; quantum dots; quantum wires;

    机译:量子点;量子点;量子线;

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