Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure

著录项

• 来源
  《Physical review》 |2011年第8期|p.081402.1-081402.4|共4页
• 作者

  L. B. Zhang; F. Cheng; F. Zhai; Kai Chang;

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• 作者单位

  SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

  SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China,Department of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004, China;

  Center for Statistical and Theoretical Condensed MatterPhysics and Department of Physics, Zhejiang Normal University, Jinhua 321004,People's Republic of China;

  SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China,Beijing Computational Science Research Center, Beijing 100089, China;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  fullerenes and related materials; photonic bandgap materials; reflectors; beam splitters; and deflectors;

  机译：富勒烯及相关材料;光子带隙材料;反射器;分束器;和导流板;