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Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

机译:调整自组装GaSb / GaAs量子环中激子配合物的性质

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摘要

Type-Ⅱ self-assembled GaSb/GaAs nanostructures have been grown by molecular-beam epitaxy and studied by atomic-force microscopy, transmission electron microscopy, and power-dependent magnetophotoluminescence. Nanostructures on the sample surface are found to be entirely dotlike, while capped nanostructures are predominantly ringlike. Moreover, an in situ anneal process applied after thinly capping the dots is shown to enhance the severity of the rings and relax the strain in the matrix in the proximity of the GaSb, resulting in a change to the spatial configuration of the exciton complexes and their optical properties.
机译:通过分子束外延生长了Ⅱ型自组装GaSb / GaAs纳米结构,并通过原子力显微镜,透射电子显微镜和功率相关的磁光致发光进行了研究。发现样品表面上的纳米结构完全是点状的,而封端的纳米结构主要是环状的。此外,显示出在薄点覆盖点之后应用的原位退火工艺可增强环的强度并缓解GaSb附近基质中的应变,从而导致激子复合物及其分子的空间构型发生变化。光学性质。

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  • 来源
    《Physical review》 |2011年第11期|p.115311.1-115311.6|共6页
  • 作者单位

    Department of Physics, Lancaster University, Lancaster LAI 4YB, United Kingdom,Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor Darul Ehsan, Malaysia;

    Department of Physics, Lancaster University, Lancaster LAI 4YB, United Kingdom;

    Department of Physics, Lancaster University, Lancaster LAI 4YB, United Kingdom;

    Department of Physics, Lancaster University, Lancaster LAI 4YB, United Kingdom;

    Departamento de Ciencia de los Materiales el.M.y Q. 1., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro,sin, Puerto Real, Cadiz 11510, Spain;

    Departamento de Ciencia de los Materiales el.M.y Q. 1., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro,sin, Puerto Real, Cadiz 11510, Spain;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    quantum dots; quantum dots; Ⅲ-Ⅴ semiconductors; transmission electron microscopy (TEM) (including STEM, HRTEM, etc.);

    机译:量子点;量子点;Ⅲ-Ⅴ族半导体;透射电子显微镜(TEM)(包括STEM;HRTEM等);

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