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机译:调整自组装GaSb / GaAs量子环中激子配合物的性质
Department of Physics, Lancaster University, Lancaster LAI 4YB, United Kingdom,Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor Darul Ehsan, Malaysia;
Department of Physics, Lancaster University, Lancaster LAI 4YB, United Kingdom;
Department of Physics, Lancaster University, Lancaster LAI 4YB, United Kingdom;
Department of Physics, Lancaster University, Lancaster LAI 4YB, United Kingdom;
Departamento de Ciencia de los Materiales el.M.y Q. 1., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro,sin, Puerto Real, Cadiz 11510, Spain;
Departamento de Ciencia de los Materiales el.M.y Q. 1., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro,sin, Puerto Real, Cadiz 11510, Spain;
quantum dots; quantum dots; Ⅲ-Ⅴ semiconductors; transmission electron microscopy (TEM) (including STEM, HRTEM, etc.);
机译:AlGaAs / GaAs / Algaas井中GASB量子环的线性和非线性光学性能的操纵,ALAS / GAAS / INGAAS / ALAS双量子阱
机译:自组装InAs / GaAs量子环中激子配合物光致发光光谱的温度依赖性
机译:II型自组装GaSb / GaAs量子点中激子行为的研究
机译:II型气体/ GaAs自组装量子点中的空间间接激子的辐射寿命
机译:InGaAs量子柱中的太赫兹吸收和砷化铟/砷化镓量子点中的电磁场的激子调谐。
机译:在InP(100)衬底上生长的GaSb / InGaAs II型量子点的结构和光学性质
机译:调整自组装GaSb / GaAs量子环中激子配合物的性质
机译:Gaas上自组装的Insb和Gasb量子点(001);杂志文章