Analysis of GaSb and AlSb reconstructions on GaSb(lll) A- and B-oriented surfacesby azimuthal-scan reflection high-energy electron diffraction

Andre Proessdorf; Frank Grosse; Wolfgang Braun; Ferhat Katmis; Henning Riechert; Oleksandr Romanyuk

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Analysis of GaSb and AlSb reconstructions on GaSb(lll) A- and B-oriented surfacesby azimuthal-scan reflection high-energy electron diffraction

机译：方位扫描反射高能电子衍射分析GaSb（III）A和B取向表面上的GaSb和AlSb重建

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The symmetry and existence ranges of GaSb and AlSb (111) A and B surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE) environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of Ⅲ-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120° domain structure and possible disorder.

机译：GaSb和AlSb（111）A和B表面重构的对称性和存在范围在分子束外延（MBE）环境中使用方位扫描反射高能电子衍射（ARHEED）研究。提出并分析了可访问的MBE V组通量-衬底温度参数字段中所有重建的ARHEED模式。绘制过渡边界以作为将来增长实验的参考。根据Ⅲ-Ⅴ族半导体（111）表面的一般构造原理解释了实验结果。 ARHEED允许在一次连续测量中完全确定二维平面内互易晶格。这可以清楚地识别（111）表面上的重建，其中固有对称性被120°域结构和可能的混乱所掩盖。

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来源
《Physical review》 |2011年第15期|p.155317.1-155317.11|共11页
作者
Andre Proessdorf; Frank Grosse; Wolfgang Braun; Ferhat Katmis; Henning Riechert; Oleksandr Romanyuk;
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作者单位

Paul-Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany;

Paul-Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany;

Paul-Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany;

Paul-Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany;

Paul-Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany;

Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10,162 00 Prague, Czech Republic;

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正文语种 eng
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surface thermodynamics; surface energies; semiconductor surfaces;

机译：表面热力学表面能;半导体表面;

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专利

1. REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION AND PHOTOEMISSION STUDY OF GASB(1OO) RECONSTRUCTIONS [J] . Sieger MT., Chiang TC., Miller T. Physical Review, B. Condensed Matter . 1995,第11期

机译：GASB（1OO）重构的高能电子反射和光致裂变研究
2. Reflection high‐energy electron diffraction studies on the molecular‐beam‐epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSb [J] . Journal of Applied Physics . 1985,第10期

机译：GaSb上AISb，GaSb，InAs，InAsSb和GaInAsSb的分子束外延生长的反射高能电子衍射研究
3. Electronic structure and optical properties of InAs/GaSb/AlSb/GaSb superlattice [J] . Xiao-Li Lang, Jian-Bai Xia Journal of Applied Physics . 2013,第4期

机译：InAs / GaSb / AlSb / GaSb超晶格的电子结构和光学性质
4. X-ray diffraction study of GaSb/AlSb strained-layer-superlattices grown on miscut (100) substrates [C] . Albert T. Macrander, Argonne National Labs., Argonne, X Rays in Materials Analysis II: Novel Applications and Recent Developments . 1991

机译：在错切（100）衬底上生长的GaSb / AlSb应变层超晶格的X射线衍射研究
5. Quantitative biaxial texture analysis with reflection high-energy electron diffraction for ion beam-assisted deposition of MgO and heteroepitaxy of perovskite ferroelectrics. [D] . Brewer, Rhett Ty. 2004

机译：反射双能电子衍射定量双轴织构分析，用于离子束辅助沉积MgO和钙钛矿铁电体的异质外延。
6. In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy [O] . B Sanduijav, G Springholz 2010

机译：利用反射高能电子衍射和扫描隧道显微镜原位控制条形衬底上Si / Ge的生长
7. X-ray diffraction study of GaSb/AlSb strained-layer-superlattices grown on miscut (100) substrates [O] . Albert T. Macrander, Gary P. Schwartz, Gregory J. Gualteri, 1991

机译：<标题>气体/ ALSB的X射线衍射研究 - 在MISCUT（100）底物上生长的升降层 - 超晶格
8. RHEED and STM Study of Sb-Rich AlSb and GaSb (0 0 1) Surface Reconstructions; Journal article [R] . Thibado, P. M., Bennett, B. R., Shanabrook, B. V., 1997

机译：RHEED和sTm研究富含sb的alsb和Gasb（0 0 1）表面重建;杂志文章

Analysis of GaSb and AlSb reconstructions on GaSb(lll) A- and B-oriented surfacesby azimuthal-scan reflection high-energy electron diffraction

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