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Inhomogeneous electronic properties of monolayer graphene on Ru(0001)

机译:Ru(0001)上单层石墨烯的非均质电子性质

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摘要

Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) at low temperatures were applied to prove lateral inhomogeneities in the electronic properties of a single layer of graphene on the Ru(0001) surface. We found two different types of STS curves depending on the location within the moire pattern of graphene, providing direct proof for coupled and uncoupled parts of monolayer graphene on Ru(0001). Moreover, we observed differences in dI/dU curves between hills, valleys, and rims of hills, and we discuss them in relation to the electronic bulk states of Ru(0001). A detailed analysis revealed that graphene's dominating STS peak at -0.4 eV originates from a d-like Ru bulk state.
机译:在低温下使用扫描隧道显微镜和扫描隧道光谱(STS)来证明Ru(0001)表面上单层石墨烯的电子特性中的横向不均匀性。我们发现了两种不同类型的STS曲线,具体取决于石墨烯在莫尔条纹中的位置,这为Ru(0001)上单层石墨烯的耦合和非耦合部分提供了直接证明。此外,我们观察到丘陵,山谷和丘陵边缘之间的dI / dU曲线存在差异,并讨论了与Ru(0001)的电子体态有关的问题。详细分析显示,石墨烯在-0.4 eV处的主要STS峰源自d状Ru块态。

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