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机译:Ru(0001)上单层石墨烯的非均质电子性质
Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany;
Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany;
Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany;
Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany;
microscopy of surfaces; interfaces; and thin films; thin film structure and morphology; direct observation of dislocations and other defects (etch pits; decoration; electron microscopy; x-ray topography; etc.);
机译:Ru(0001)负载单层石墨烯上双金属Pt-Ru纳米团簇定向组装的原子建模
机译:Ru(0001)上的高质量亚单层,单层和双层石墨烯
机译:在Ru(0001)上外延生长的三层石墨烯的堆积依赖性电子性质
机译:衬底步骤和单层双层结的影响在4H-SiC(0001)上的外延石墨烯中的电子输送
机译:分子在石墨烯/ Ru(0001)上的嵌入,吸附和反应
机译:分子间与分子-底物的相互作用:结合STM和石墨烯/ Ru(0001)上的超分子相的理论研究
机译:Ru(0001)负载单层石墨烯上双金属Pt-Ru纳米团簇定向组装的原子建模
机译:Ru(0001)表面Cu和Ni薄膜的化学,结构和电子性质对比