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Estimating the range of influence of point defects on Cu (110) surface states

机译:估计点缺陷对Cu(110)表面状态的影响范围

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摘要

By utilizing reflection anisotropy spectroscopy (RAS) and scanning tunneling microscopy (STM) measurements of the ion-bombarded Cu (110) surface at low temperatures, we have developed a simple methodology for estimating the effective surface area over which irradiation-induced defects perturb surface states, leading to a reduction in the intensity of the 2.1 eV RAS peak of this surface. Each composite defect decorating an ion-impact site quenches the RAS signal in proportion to an area equivalent to approximately 170 unit cells. We estimate that an atomic defect has an effective RAS cross section with area approximately equal to that of a circle with a radius of 0.75 nm, an area equivalent to that of around 19 unit cells. Accurate determination of the coverage and spatial distribution of surface defects is a prerequisite for a coherent analytical approach to modeling the RAS data of this system.
机译:通过利用离子各向异性轰击的Cu(110)表面在低温下的反射各向异性光谱(RAS)和扫描隧道显微镜(STM)测量,我们开发了一种简单的方法来估算有效表面面积,在该有效表面积上辐射诱发的缺陷会扰动表面状态,导致该表面的2.1 eV RAS峰强度降低。每个装饰离子撞击位点的复合缺陷均按相当于约170个单位晶胞的面积的比例淬灭RAS信号。我们估计原子缺陷具有有效的RAS横截面,其面积大约等于半径为0.75 nm的圆的面积,该面积等于大约19个单位晶胞的面积。准确确定表面缺陷的覆盖范围和空间分布是采用连贯分析方法对系统RAS数据建模的前提。

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