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Theory of optical spin orientation in silicon

机译:硅中光学自旋取向的理论

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We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the selection rules, the contribution to the carrier and spin injection in each conduction band valley from each phonon branch and each valence band, and the temperature dependence of these processes. The transition from the heavy hole band to the lowest conduction band dominates the injection due to the large joint density of states. For incident light propagating along the [001] direction, the injection rates and the degree of spin polarization of injected electrons show strong valley anisotropy. The maximum degree of spin polarization is at the injection edge with values 25% at low temperature and 15% at high temperature.
机译:我们使用电子态的经验pseudo势描述和声子态的绝热键电荷模型,从理论上研究了体硅中载流子和自旋的间接光学注入。我们确定选择规则,每个声子分支和每个价带在每个导带谷中对载流子和自旋注入的贡献,以及这些过程的温度依赖性。由于状态的联合密度大,从重空穴带到最低导带的过渡支配了注入。对于沿[001]方向传播的入射光,注入速度和注入电子的自旋极化程度显示出很强的谷底各向异性。自旋极化的最大程度在注入边缘,在低温下为25%,在高温下为15%。

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