Variational analysis of the Rashba splitting in III-V semiconductor inversion layers

M. A. Toloza Sandoval; A. Ferreira da Silva; E. A. de Andrada e Silva; G. C. La Rocca

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Variational analysis of the Rashba splitting in III-V semiconductor inversion layers

机译：III-V半导体反型层中Rashba分裂的变异分析

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A spin-dependent variational theory is used to analyze the Rashba spin-orbit splitting in two-dimensional electron gases formed in III-V semiconductor inversion layers. The spin split conduction subbands in CdTe/InSb, insulator/InAs, InP/InGaAs, InAlAs/InGaAs, and AlGaAs/GaAs heterojunctions are calculated. The theory, presented here in detail, is based on the 8 x 8 k · p Kane model and on the introduction of simple and convenient spin-dependent Fang-Howard trial functions, and leads to analytical expressions for the split subbands, as well as allows for a detailed knowledge of the Rashba spin-orbit coupling, including its explicit dependence on structure parameters and its decomposition into separate contributions. The Rashba coupling parameter and the population difference in the spin-split subbands, as experimentally determined from the beating pattern of the Shubnikov-de Haas (SdH) oscillations, are obtained as a function of the electron density (n,). The separate contributions to the particularly large Rashba splitting in CdTe/InSb heterojunctions are also computed and discussed. It is shown, for example, that due to the spin-dependent boundary conditions, the direct Rashba spin-orbit coupling term in the effective Hamiltonian dominates the splitting only for n_s > 10~(10) cm~(-2) while it is the barrier penetration kinetic energy term that gives the largest contribution to the Rashba effect at lower densities.

机译：自旋相关变分理论用于分析III-V半导体反型层中形成的二维电子气中的Rashba自旋轨道分裂。计算CdTe / InSb，绝缘体/ InAs，InP / InGaAs，InAlAs / InGaAs和AlGaAs / GaAs异质结中的自旋分裂导带。此处详细介绍的理论基于8 x 8 k·p Kane模型，并基于简单方便的自旋相关的Fang-Howard试验函数的引入，并得出了分裂子带的解析表达式，以及允许您详细了解Rashba自旋轨道耦合，包括其对结构参数的明确依赖性以及将其分解为单独的贡献。根据Shubnikov-de Haas（SdH）振荡的跳动模式，通过实验确定了Rashba耦合参数和自旋分裂子带中的种群差异，它是电子密度（n，）的函数。还计算和讨论了对CdTe / InSb异质结中特别大的Rashba分裂的单独贡献。例如，表明，由于自旋相关的边界条件，有效哈密顿量中的直接Rashba自旋轨道耦合项仅在n_s> 10〜（10）cm〜（-2）时才占主导地位。在较低密度下对Rashba效应贡献最大的势垒穿透动能项。

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来源
《Physical review》 |2011年第23期|p.235315.1-235315.6|共6页
作者
M. A. Toloza Sandoval; A. Ferreira da Silva; E. A. de Andrada e Silva; G. C. La Rocca;
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作者单位

Institute/ de Fisica, Universidade Federal da Bahia, 40210-340 Salvador, Bahia, Brazil;

Institute/ de Fisica, Universidade Federal da Bahia, 40210-340 Salvador, Bahia, Brazil;

Instituto Nacional de Pesquisas Espaciais, INPE, C.P. 515, 12201-970 Sao Jose dos Campos, Sao Paulo, Brazil;

Scuola Normale Superiore and CNISM, Piazza dei Cavalieri 7, 1-56126 Pisa, Italy;

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spin-orbit coupling, zeeman and stark splitting, jahn-teller effect; basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.); quantum wells; magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields;

机译：自旋轨道耦合;塞曼和斯塔克分裂;詹恩-泰勒效应;基集（LCAO;平面波;APW等）和相关方法（散射方法;ASA;线性化方法等）;量子阱磁电子学自旋电子学：利用自旋极化传输或集成磁场的设备;

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1. Rashba spin-splitting in narrow gap III-V semiconductor quantum wells [J] . Stanley JP., Pattinson N., Lambert CJ., Physica, E. Low-dimensional systems & nanostructures . 2004,第3a4期

机译：Rashba自旋分裂在窄间隙III-V半导体量子阱中
2. BYCHKOV-RASHBA SPLITTING IN INVERSION LAYERS ON HEAVILY-DOPED p-HgCdTe [J] . V. F. RADANTSEV, G. I. KULAEV, V. V. KRUZHAEV International journal of nanoscience . 2003,第6期

机译：重掺杂p-HgCdTe上反型层中的BYCHKOV-RASHBA分裂
3. Zero field spin-splitting and Rashba parameter in inversion layers on p-InAs mosfets: results of fully numerical multi-band computations [J] . Lamari S. Physica, E. Low-dimensional systems & nanostructures . 2002,第1a4期

机译：p-InAs MOSFET反演层中的零场自旋分裂和Rashba参数：全数值多频带计算的结果
4. Heterointegration of compound III-V semiconductors by wafer bonding and layer splitting for optoelectronic applications [C] . Baumgart Helmut, Moutanabbir Oussama Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on . 2012

机译：化合物III-V半导体通过晶片键合和层分离进行异质集成，用于光电应用
5. Characterization and application of MeV ion-implanted layers in III-V compound semiconductors. [D] . Xiong, Fulin. 1990

机译：MeV离子注入层在III-V化合物半导体中的表征和应用。
6. Large Rashba spin splitting of a metallic surface-state band on a semiconductor surface [O] . Koichiro Yaji, Yoshiyuki Ohtsubo, Shinichiro Hatta, -1

机译：半导体表面上金属表面状态带的大Rashba自旋分裂
7. Variational Rashba splitting in two-dimensional electron gases in III-V semiconductor heterojunctions [O] . Sandoval, M. A. Toloza, Silva, A. Ferreira da, Andrada e Silva, Erasmo Assumpcao de, 2009

机译：III-V半导体异质结中二维电子气中的变Rashba分裂

Variational analysis of the Rashba splitting in III-V semiconductor inversion layers

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