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首页> 外文期刊>Physical review >Nambu-Eliashberg theory for multiscale quantum criticality: Application to ferromagnetic quantum criticality in the surface of three-dimensional topological insulators
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Nambu-Eliashberg theory for multiscale quantum criticality: Application to ferromagnetic quantum criticality in the surface of three-dimensional topological insulators

机译：Nambu-Eliashberg多尺度量子临界理论：在三维拓扑绝缘体表面的铁磁量子临界中的应用

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摘要

We develop an Eliashberg theory for multiscale quantum criticality, considering ferromagnetic quantum criticality in the surface of three-dimensional topological insulators. Although an analysis based on the random-phase approximation has been performed for multiscale quantum criticality, an extension to an Eliashberg framework was claimed to be far from triviality in the respect that the self-energy correction beyond the random-phase approximation (which originates from scattering with z = 3 longitudinal fluctuations) changes the dynamical exponent z = 2 in the transverse mode, explicitly demonstrated in nematic quantum criticality. An essential ingredient of this paper is to introduce an anomalous self-energy associated with the spin-flip channel. Such an anomalous self-energy turns out to be essential for self-consistency of the Eliashberg framework in the multiscale quantum critical point because this off-diagonal self-energy cancels the normal self-energy exactly in the low-energy limit, preserving the dynamics of both z = 3 longitudinal and z = 2 transverse modes. This multiscale quantum criticality is consistent with that in a perturbative analysis for the nematic quantum critical point, where a vertex correction in the fermion bubble diagram cancels a singular contribution due to the self-energy correction, maintaining the z = 2 transverse mode. We also claim that this off-diagonal self-energy gives rise to an artificial electric field in the energy-momentum space in addition to the Berry curvature. We discuss the role of such an anomalous self-energy in the anomalous Hall conductivity.
机译：考虑到三维拓扑绝缘体表面的铁磁量子临界，我们开发了一种用于多尺度量子临界的Eliashberg理论。尽管已针对多尺度量子临界性进行了基于随机相位近似的分析，但据称对Eliashberg框架的扩展远非琐碎，因为自能量校正超出了随机相位近似（这源自z = 3的纵向波动的散射）在横向模式下改变了动态指数z = 2，这在向列量子临界中得到了明确证明。本文的重要组成部分是引入与自旋翻转通道相关的异常自能量。这种异常的自能量对于多尺度量子临界点的Eliashberg框架的自洽性至关重要，因为这种非对角的自能量恰好在低能量范围内抵消了正常的自能量，从而保持了动力学。 z = 3的纵向模式和z = 2的横向模式。这种多尺度量子临界性与对向列量子临界点的扰动分析相一致，其中费米子气泡图中的顶点校正由于自能校正而抵消了奇异贡献，从而保持了z = 2横模。我们还声称，这种非对角线的自能量，除了贝里曲率之外，还在能量动量空间中产生了一个人工电场。我们讨论了这种异常的自能量在异常霍尔电导率中的作用。

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  • 来源
    《Physical review》 |2011年第24期|p.245138.1-245138.13|共13页
  • 作者

    Ki-Seok Kim; Tetsuya Takimoto;

  • 作者单位

    Asia Pacific Center fB.83r TheB.83retical Physics, HB.83gil Kim MemB.83rial Building, PB.83STECH, HyB.83ja-dB.83ng, Namgu,PB.83hang 790-784, KB.83rea Department B.83f Physics, PB.83hang University B.83f Science and TechnB.83lB.83gy, PB.83hang, GyeB.83ngbuk 790-784, KB.83rea;

    Asia Pacific Center fB.83r TheB.83retical Physics, HB.83gil Kim MemB.83rial Building, PB.83STECH, HyB.83ja-dB.83ng, Namgu,PB.83hang 790-784, KB.83rea Department B.83f Physics, PB.83hang University B.83f Science and TechnB.83lB.83gy, PB.83hang, GyeB.83ngbuk 790-784, KB.83rea;

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  • 正文语种 eng
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  • 关键词

    electron states at surfaces and interfaces; theories and models of many-electron systems; electronic transport in interface structures;

    机译：表面和界面的电子态;多电子系统的理论和模型;接口结构中的电子传输;

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