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首页> 外文期刊>Physical review >D band Raman intensity calculation in armchair edged graphene nanoribbons
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D band Raman intensity calculation in armchair edged graphene nanoribbons

机译：扶手椅边石墨烯纳米带的D带拉曼强度计算

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摘要

The D band Raman intensity is calculated for armchair edged graphene nanoribbons using an extended tight-binding method in which the effect of interactions up to the seventh nearest neighbor is taken into account. The possibility of a double resonance Raman process with multiple scattering events is considered by calculating a T matrix through a direct diagonalization of the nanoribbon Hamiltonian. We show that long-range interactions play an important role in the evaluation of both the D band intensity and that the main effect of multiple scattering events on the calculated D band is an overall increase in intensity by a factor of 4. The D band intensity is shown to be independent of the nanoribbon widths for widths larger than 17 nm, leading to the well-known linear dependence of the I_D/I_C ratio on the inverse of the crystalline size. The D band intensity was shown to be nearly independent of the laser excitation energy and to have a maximum value for incident and scattering photons polarized along the direction of the edge.
机译：使用扩展的紧密结合方法计算扶手椅边缘石墨烯纳米带的D带拉曼强度，其中考虑了相互作用的影响，直到第七个最近的邻居。通过纳米带哈密顿量的直接对角化计算一个T矩阵，可以考虑具有多个散射事件的双共振拉曼过程的可能性。我们显示，远距离相互作用在D波段强度的评估中起着重要作用，并且多次散射事件对计算出的D波段的主要影响是强度的整体提高了4倍。D波段强度对于大于17nm的宽度，显示出I_D / I_C比与纳米带宽度无关，这导致众所周知的I_D / I_C比与晶体尺寸的倒数成线性关系。示出了D带强度几乎与激光激发能量无关，并且对于沿着边缘方向偏振的入射和散射光子具有最大值。

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  • 来源
    《Physical review》 |2011年第24期|p.245435.1-245435.8|共8页
  • 作者

    E. B. Barros; K. Sato; Ge. G. Samsonidze; A. G. Souza Filho; M. S. Dresselhaus; R. Saito;

  • 作者单位

    DepartamentB.83 de Fisica, Universidade Federal dB.83 Ceard, FB.83rtaleza. Ceard, 60455-760 Brazil,Department B.83f Physics, TB.83hB.83ku University, Sendai 980-8578, Japan;

    Department B.83f Physics, TB.83hB.83ku University, Sendai 980-8578, Japan;

    Department B.83f Physics, University B.83f CalifB.83rnia at Berkeley, and Materials Sciences DivisiB.83n, Lawrence Berkeley NatiB.83nal LabB.83ratB.83ry.Berkeley, CalifB.83rnia 94720, USA;

    DepartamentB.83 de Fisica, Universidade Federal dB.83 Ceard, FB.83rtaleza. Ceard, 60455-760 Brazil;

    Department B.83f Electrical Engineering and CB.83mputer Science and Department B.83f Physics, Massachusetts Institute B.83f TechnB.83lB.83gy,Cambridge, Massachusetts, 02139, USA;

    Department B.83f Physics, TB.83hB.83ku University, Sendai 980-8578, Japan;

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