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首页> 外文期刊>Physical review >Stochastic domain-wall depinning under current in FePt spin valves and single layers
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Stochastic domain-wall depinning under current in FePt spin valves and single layers

机译：FePt自旋阀和单层中电流作用下的随机畴壁去钉

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摘要

In this paper, we report on the current-induced depinning of domain walls from structural defects in nanowires tailored in both FePt//MgO and FePt/Pt/FePt//MgO epilayers with high perpendicular magnetic anisotropy. In these systems, we show that the nature of domain wall depinning is stochastic. Our results indicate that there are two source of stochasticity: thermal activation and domain wall configuration degeneracy. We show that the depinning rate can be influenced with a strong efficiency by an applied dc current, whose effect on both thermal and configurational stochasticity is exactly similar to that of an additional magnetic field. Interestingly, Joule heating is found to cancel the bipolar effect of the current for quite low current densities. Contrarily to what was expected, the spin-transfer efficiency measured in single layers and spin valves are found to be similar. Results from micromagnetic simulations are shown to reproduce the observed statistical trends.
机译：在本文中，我们报道了电流诱导的畴壁从纳米线结构缺陷中脱钉的情况，这些结构缺陷是针对具有高垂直磁各向异性的FePt // MgO和FePt / Pt / FePt // MgO外延层定制的。在这些系统中，我们证明了畴壁固定的性质是随机的。我们的结果表明，存在两种随机性来源：热激活和畴壁结构退化。我们表明，通过施加直流电流可以以很高的效率影响去钉率，该电流对热和构型随机性的影响与附加磁场的影响完全相似。有趣的是，发现焦耳加热可以在相当低的电流密度下抵消电流的双极效应。与预期相反，发现在单层和旋转阀中测得的旋转传递效率相似。显示了微磁模拟的结果，可以再现观察到的统计趋势。

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  • 来源
    《Physical review》 |2011年第1期|p.014411.1-014411.5|共5页
  • 作者

    A. P. Mihai; F. Garcia-Sanchez; L. Vila; A. Marty; L. D. Buda-Prejbeanu; J. C. Pillet; C. Beigne; D. Ravelosona; C. Mannequin; J. C. Toussaint; J. P. Attane;

  • 作者单位

    Universite Joseph Fourier, BP 53-38041, 621 avenue Centrale, F-38400 Saint Martin d'Heres, France,INAC, SP2M, CEA Grenoble, 17 avenue des Martyrs, F-38054, Grenoble, France;

    SPINTEC, UMR-8191, CEA-INACICNRSIUJF-Grenoble Hgrenoble-INP, 17 rue des Martyrs, F-38054 Grenoble cede.x 9, France;

    Universite Joseph Fourier, BP 53-38041, 621 avenue Centrale, F-38400 Saint Martin d'Heres, France,INAC, SP2M, CEA Grenoble, 17 avenue des Martyrs, F-38054, Grenoble, France;

    Universite Joseph Fourier, BP 53-38041, 621 avenue Centrale, F-38400 Saint Martin d'Heres, France,INAC, SP2M, CEA Grenoble, 17 avenue des Martyrs, F-38054, Grenoble, France;

    SPINTEC, UMR-8191, CEA-INACICNRSIUJF-Grenoble Hgrenoble-INP, 17 rue des Martyrs, F-38054 Grenoble cede.x 9, France;

    Universite Joseph Fourier, BP 53-38041, 621 avenue Centrale, F-38400 Saint Martin d'Heres, France,INAC, SP2M, CEA Grenoble, 17 avenue des Martyrs, F-38054, Grenoble, France;

    Universite Joseph Fourier, BP 53-38041, 621 avenue Centrale, F-38400 Saint Martin d'Heres, France,INAC, SP2M, CEA Grenoble, 17 avenue des Martyrs, F-38054, Grenoble, France;

    Institut d'Electronique Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France,Universite Paris-Sud, F-91405 Orsay, France;

    Universite Joseph Fourier, BP 53-38041, 621 avenue Centrale, F-38400 Saint Martin d'Heres, France,INAC, SP2M, CEA Grenoble, 17 avenue des Martyrs, F-38054, Grenoble, France;

    Institut NEEL, CNRS et Universite Joseph Fourier, BP166, F-38042 Grenoble Cede.x 9, France;

    Universite Joseph Fourier, BP 53-38041, 621 avenue Centrale, F-38400 Saint Martin d'Heres, France,INAC, SP2M, CEA Grenoble, 17 avenue des Martyrs, F-38054, Grenoble, France;

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  • 正文语种 eng
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  • 关键词

    giant magnetoresistance; domain walls and domain structure;

    机译：巨磁阻畴壁和畴结构;

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