Effect of misfit dislocation on surface diffusion

Maral Aminpour; Oleg Trushin; Talat S. Rahman

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Effect of misfit dislocation on surface diffusion

机译：错位错位对表面扩散的影响

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We apply molecular dynamics and molecular static methods to study the effect of misfit dislocations on adatom diffusion in close proximity to the dislocation core in heteroepitaxial systems, using many-body interaction potentials. Our system consists of several layers (three-seven) of Cu on top of a Ni(111) substrate. The misfit dislocations are created with the core located at the interface between the Cu film and the Ni substrate, using the repulsive biased potential method described earlier. We find that presence of the defect under the surface strongly affects the adatom trajectory, creating anisotropy in atomic diffusion, independent of the thickness of the Cu film. We also calculate the potential energy surface available to the adatom and compare the energy barriers for adatom diffusion in the proximity of the core region and on the defect-free surface.

机译：我们使用分子动力学和分子静态方法，利用多体相互作用势研究错配位错对异质外延系统中位错核心附近的原子扩散的影响。我们的系统由位于Ni（111）衬底顶部的几层（三到七层）Cu组成。使用前面描述的排斥性偏置电势方法，芯位于Cu膜和Ni衬底之间的界面处，会产生错配位错。我们发现表面下缺陷的存在强烈影响吸附原子的轨迹，在原子扩散中产生各向异性，而与铜膜的厚度无关。我们还计算了可用于吸附原子的势能表面，并比较了吸附原子在核心区域附近和无缺陷表面上扩散的能垒。

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来源
《Physical review》 |2011年第3期|p.035455.1-035455.5|共5页
作者
Maral Aminpour; Oleg Trushin; Talat S. Rahman;
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作者单位

Department of Physics, University of Central Florida, Orlando, Florida 32816, USA;

Yaroslavl Branch of the Institute of Physics and Technology of Russian Academy of Sciences, Yaroslav, Russia;

Department of Physics, University of Central Florida, Orlando, Florida 32816, USA;

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正文语种 eng
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关键词
diffusion; interface formation; diffusion of adsorbates; kinetics of coarsening and aggregation; defects and impurities: doping, implantation, distribution, concentration, etc., microscopy of surfaces, interfaces, and thin films;

机译：扩散;界面形成;吸附物的扩散;粗化和聚集的动力学;缺陷和杂质：掺杂;注入;分布;浓度等;表面;界面和薄膜的显微镜检查;

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专利

1. Equilibrium surface roughness of a strained epitaxial film due to surface diffusion induced by interface misfit dislocations [J] . F. Jonsdottir, L.B. Freund Mechanics of materials . 1995,第4期

机译：界面失配位错引起的表面扩散引起的应变外延膜的平衡表面粗糙度
2. SCANNING-TUNNELING-MICROSCOPY OBSERVATION OF STRESS-DRIVEN SURFACE DIFFUSION DUE TO LOCALIZED STRAIN FIELDS OF MISFIT DISLOCATIONS IN HETEROEPITAXY [J] . Springholz G., Holy V., Bauer G. Physical Review, B. Condensed Matter . 1996,第7期

机译：异位错配错位的局部应变场引起的应力驱动表面扩散的扫描隧道显微镜观察
3. Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si_(0.8)Ge_(0.2) [J] . X. L. Yuan, T. Sekiguchi, J. Niitsuma, Applied Physics Letters . 2005,第16期

机译：SiGe梯度层中位错的不均匀分布及其对应变Si / Si_（0.8）Ge_（0.2）界面处的表面形态和失配位错的影响
4. The origin of misfit dislocations and the surface cross-hatch pattern in low-misfit strained epitaxial layers [C] . R Beanland, A R Boyd Institute of Physics Conference on Microscopy and Semiconducting Materials . 1995

机译：低误区紧张外延层中的错位脱臼的起源和表面交叉舱口图
5. Structural, electrical characterization and simulation of periodic misfit dislocation arrays localized at the gallium antimonide/gallium arsenide interface [D] . Jallipalli, Anitha 2008

机译：位于锑化镓/砷化镓界面的周期性错配位错阵列的结构，电学表征和模拟
6. Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots? [O] . Zi-Bin Chen, Wen Lei, Bin Chen, 2012

机译：失配位错能否位于InAs / GaAs（001）外延量子点的界面上方？
7. Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2 [O] . Yuan X. L., Sekiguchi T., Niitsuma J., 2005

机译：SiGe梯度层中位错的不均匀分布及其对应变Si / Si0.8Ge0.2界面处的表面形态和失配位错的影响
8. Misfits and dislocations on two-dimensional monolayer surfaces [R] . Dikande, A. M. , Kofane, T. C. 1995

机译：二维单层表面上的不匹配和错位

Effect of misfit dislocation on surface diffusion

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