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首页> 外文期刊>Physical review >Atomic scale annealing effects on In_xGa_(1-x)N_yAs_(1-y), studied by TEM three-beam imaging
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Atomic scale annealing effects on In_xGa_(1-x)N_yAs_(1-y), studied by TEM three-beam imaging

机译：TEM三束成像研究原子尺度退火对In_xGa_（1-x）N_yAs_（1-y）的影响

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摘要

A transmission electron microscopy (TEM) method for simultaneous measurement of indium and nitrogen content in InGaNAs at atomic scale is introduced, tested, and applied to investigate thermal annealing effects on structural properties. Our technique is based on the extraction of strain and chemical sensitive contrast from a single three-beam TEM lattice fringe image by subsequent decomposition into 220 and 020 two-beam fringe images, being free of nonlinear imaging artifacts. From comparison with simulated strain and 020 fringe amplitude, concentration maps and profiles are derived. For this purpose, the Bloch-wave approach is used with structure factors adapted for chemical bonding, static atomic displacements, as well as diffuse losses due to static and thermal disorder. Application to In_(0.28)Ga_(0.72)N_(0.025)As_(0.975) before and after annealing at 670 ℃ yields dissolution of In-rich islands and N-rich clusters and formation of a quantum well with nearly constant thickness and homogeneous elemental distributions, resulting in symmetric profiles along growth direction. To verify that these structural transitions are indeed correlated with typically observed changes of optical properties during thermal annealing, photoluminescence spectra are presented, revealing an increase in intensity by a factor of 20 and a strong blue shift of 60 meV.
机译：介绍了一种用于原子级同时测量InGaNAs中铟和氮含量的透射电子显微镜（TEM）方法，并进行了测试，并用于研究热退火对结构性能的影响。我们的技术基于从单个三光束TEM晶格条纹图像中提取应变和化学敏感性对比，然后将其分解为220和020两光束条纹图像，而没有非线性成像伪影。通过与模拟应变和020条纹幅度的比较，得出浓度图和轮廓。为此，使用Bloch-wave方法，其结构因子适用于化学键，静态原子位移以及由于静态和热无序引起的扩散损耗。在670℃退火前后，在In_（0.28）Ga_（0.72）N_（0.025）As_（0.975）上应用可溶解富In岛和富N团簇，并形成厚度几乎恒定且元素均质的量子阱。分布，导致沿增长方向的对称轮廓。为了验证这些结构转变确实与热退火过程中通常观察到的光学性能变化相关，提出了光致发光光谱，揭示了强度增加了20倍和60 meV的强烈蓝移。

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  • 来源
    《Physical review》 |2011年第4期|p.045316.1-045316.12|共12页
  • 作者

    Knut Mueller; Marco Schowalter; Andreas Rosenauer; Dongzhi Hu; Daniel M. Schaadt; Michael Hetterich; Philippe Gilet; Oleg Rubel; Rafael Fritz; Kerstin Volz;

  • 作者单位

    Universitdt Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany;

    Universitdt Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany;

    Universitdt Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany;

    Institutfiir Angewandte Physik and DFG Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede Str. 1, D-76131 Karlsruhe, Germany;

    Institutfiir Angewandte Physik and DFG Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede Str. 1, D-76131 Karlsruhe, Germany;

    Institutfiir Angewandte Physik and DFG Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede Str. 1, D-76131 Karlsruhe, Germany;

    CEA LETIMinatec Campus, 17 Avenue des Martyrs, F-38054 Grenoble Cedex 9, France;

    Thunder Bay Regional Research Institute, 290 Munro Street, Thunder Bay, Canada Lakehead University, 955 Oliver Road, Thunder Bay, Ontario, P7A 7T1 Canada and Materials Science Center and Faculty of Physics, Philipps Universitaet Marburg, Hans-Meerwein-Straβe, D-35032 Marburg, Germany;

    Materials Science Center and Faculty of Physics, Philipps Universitdt Marburg, Hans-Meerwein-Strafie, D-35032 Marburg, Germany;

    Materials Science Center and Faculty of Physics, Philipps Universitdt Marburg, Hans-Meerwein-Strafie, D-35032 Marburg, Germany;

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  • 关键词

    optical and dielectric properties (related to treatment conditions); composition, segregation; defects and impurities; composition, segregation; defects and impurities;

    机译：光学和介电性能（与处理条件有关）;组成;隔离;缺陷和杂质;组成;隔离;缺陷和杂质;

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