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Ultrafast carrier recombination and generation rates for plasmon emission and absorption in graphene

机译:石墨烯中等离激元发射和吸收的超快载流子重组和生成速率

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摘要

Electron-hole generation and recombination rates for plasmon emission and absorption in graphene are presented. The recombination times of carriers due to plasmon emission are found to be in the tens of femtoseconds to hundreds of picoseconds range. The recombination times depend sensitively on the carrier energy, carrier density, temperature, and plasmon dispersion. Carriers near the Dirac point are found to have much longer lifetimes compared to carriers at higher energies. Plasmons in a graphene layer on a polar substrate hybridize with the surface optical phonons and this hybridization modifies the plasmon dispersion. We also present generation and recombination rates of carriers due to plasmon emission and absorption in graphene layers on polar substrates.
机译:提出了电子空穴的产生和复合速率,以促进石墨烯中等离子体的发射和吸收。发现由于等离激元发射引起的载流子的重组时间在数十飞秒到数百皮秒的范围内。重组时间敏感地取决于载流子能量,载流子密度,温度和等离子体扩散。与高能量的载流子相比,狄拉克点附近的载流子的寿命要长得多。极性基板上石墨烯层中的等离激元与表面光学声子杂交,并且这种杂交改变了等离激元色散。我们还介绍了由于等离子激元在极性基板上的石墨烯层中的等离子体发射和吸收而导致的载流子的生成和重组速率。

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