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Comparison of frequency responses of cloaking devices under nonmonochromatic illumination

机译:非单色照明下隐身装置频率响应的比较

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摘要

Plasmonic coatings have been proposed as a robust method to suppress the scattering signature of conventional dielectric objects, typically by surrounding a given object of moderate size with an isotropic, homogeneous, dispersive material that has a low or negative permittivity. In contrast to transformation-based cloaking devices, where highly anisotropic inhomogeneous materials achieve invisibility by electromagnetically isolating a certain region of space, plasmonic cloaks operate under the principle of scattering cancellation and usually allow field energy to enter the device's core. So far, plasmonic devices have been mostly examined using single-frequency, plane-wave excitations. In this work, the performance of such plasmonic cloaks when illuminated by more realistic, broadband nonmonochromatic pulses is investigated and compared with other cloaking mechanisms. The two-dimensional total-field scattered-field method is used within the finite-difference time-domain dispersive numerical technique in order to simulate time domain effects when temporally Gaussian pulses are launched toward cylindrical moderately-sized dielectric objects which are covered with appropriate plasmonic coatings. The results are compared to the performance of transformation-based cloaks, finding that the plasmonic cloaks may suppress scattering more effectively over a wider frequency range.
机译:已经提出等离子体涂层作为抑制常规电介质物体的散射特征的鲁棒方法,通常通过用具有低或负介电常数的各向同性,均匀,分散的材料包围中等大小的给定物体来进行。与基于转换的隐身设备不同,在后者中,高度各向异性的非均质材料通过电磁隔离一定的空间区域来实现隐身,而等离子隐身则在散射消除的原理下运行,通常使场能进入设备的核心。到目前为止,等离子激元设备已主要使用单频平面波激励进行了检查。在这项工作中,研究了这种等离子体激元披风在被更现实的宽带非单色脉冲照射时的性能,并将其与其他隐蔽机制进行了比较。有限差分时域色散数值技术中使用了二维总场散射场方法,以便模拟当时间高斯脉冲向圆柱状中等尺寸的介质物体(其上覆盖有适当的等离激元)发射时的时域效应。涂料。将结果与基于转换的披风的性能进行了比较,发现等离子披风可在更宽的频率范围内更有效地抑制散射。

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  • 来源
    《Physical review》 |2011年第4期|p.045102.1-045102.8|共8页
  • 作者单位

    School of Electronic Engineering and Computer Science, Queen Mary University of London, London El 4NS, United Kingdom,Department of Materials Science, University of Patras, Patras 26500, Greece;

    School of Electronic Engineering and Computer Science, Queen Mary University of London, London El 4NS, United Kingdom,Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712, USA;

    School of Electronic Engineering and Computer Science, Queen Mary University of London, London El 4NS, United Kingdom;

    Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712, USA;

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