electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon

著录项

• 来源
  《Physical review》 |2011年第4期|p.045204.1-045204.6|共6页
• 作者

  W. Akhtar; H. Morishita; K. Sawano; Y. Shiraki; L. S. Vlasenko; K. M. Itoh;

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• 作者单位

  School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohuku-ku, Yokohama 223-8522, Japan;

  School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohuku-ku, Yokohama 223-8522, Japan;

  Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan;

  Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan;

  A. F. loffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;

  School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohuku-ku, Yokohama 223-8522, Japan;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  electron paramagnetic resonance and relaxation; charge carriers: generation, recombination, lifetime, and trapping; relaxation effects; other topics in magnetic resonances and relaxations (restricted to new topics in section 76);

  机译：电子顺磁共振和弛豫;电荷载体：产生;重组;寿命和捕获;松弛效果;磁共振和弛豫中的其他主题（仅限于第76节中的新主题）;